3. November 2017 / R. Bek

Self-mode-locked AlGaInP-VECSEL

We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.

Publication: Self-mode-locked AlGaInP-VECSEL
R. Bek, M. Großmann, H. Kahle, M. Koch A. Rahimi-Iman, M. Jetter and P. Michler
externer Link Appl. Phys. Lett. 111, 182105 (2017)

  

Contact person: R. Bek

Zum Seitenanfang