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Bauer, Stephanie

Stephanie Bauer

MSc.

PhD-Student
Institut für Halbleiteroptik und Funktionelle Grenzflächen
Semiconductor Epitaxy Group

Kontakt

+49 711 685 63868
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Allmandring 3
70569 Stuttgart
Deutschland
Raum: 1.011

Publikationen

2023
1. Nawrath, C., Joos, R., Kolatschek, S., Bauer, S., Pruy, P., Hornung, F., Fischer, J., Huang, J., Vijayan, P., Sittig, R., Jetter, M., Portalupi, S. L., & Michler, P. (2023). Bright Source of Purcell-Enhanced, Triggered, Single Photons in the Telecom C-Band. Advanced Quantum Technologies. https://doi.org/10.1002/qute.202300111
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  @article{nawrath2023bright, abstract = {Several emission features mark semiconductor quantum dots as promisingnon-classical light sources for prospective quantum implementations. Forlong-distance transmission and Si-based on-chip processing, the possibility tomatch the telecom C-band is decisive, while source brightness and highsingle-photon purity are key features in virtually any quantumimplementation. An InAs/InGaAs/GaAs quantum dot emitting in the telecomC-band coupled to a circular Bragg grating is presented here. This cavitystructure stands out due to its high broadband collection efficiency and highattainable Purcell factors. Here, simultaneously high brightness with afiber-coupled single-photon count rate of 13.9 MHz for an excitationrepetition rate of 228 MHz (first-lens single-photon collection efficiency≈17%for NA=0.6), while maintaining a low multi-photon contribution ofg(2)(0)=0.0052 is demonstrated. Moreover, the compatibility withtemperatures of up to 40 K attainable with compact cryo coolers, furtherunderlines the suitability for out-of-the-lab implementations}, author = {Nawrath, Cornelius and Joos, Raphael and Kolatschek, Sascha and Bauer, Stephanie and Pruy, Pascal and Hornung, Florian and Fischer, Julius and Huang, Jiasheng and Vijayan, Ponraj and Sittig, Robert and Jetter, Michael and Portalupi, Simone Luca and Michler, Peter}, issn = {2511-9044}, journal = {Advanced Quantum Technologies}, month = {08}, title = {Bright Source of Purcell-Enhanced, Triggered, Single Photons in the Telecom C-Band}, url = {https://doi.org/10.1002/qute.202300111}, year = 2023 }
  Link
  https://doi.org/10.1002/qute.202300111
2022
1. Sittig, R., Nawrath, C., Kolatschek, S., Bauer, S., Schaber, R., Huang, J., Vijayan, P., Pruy, P., Portalupi, S. L., Jetter, M., & Michler, P. (2022). Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform. Nanophotonics. https://doi.org/doi:10.1515/nanoph-2021-0552
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  @article{doi:10.1515/nanoph-2021-0552, abstract = {The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal–organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies.}, author = {Sittig, Robert and Nawrath, Cornelius and Kolatschek, Sascha and Bauer, Stephanie and Schaber, Richard and Huang, Jiasheng and Vijayan, Ponraj and Pruy, Pascal and Portalupi, Simone Luca and Jetter, Michael and Michler, Peter}, doi = {doi:10.1515/nanoph-2021-0552}, journal = {Nanophotonics}, title = {Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform}, url = {https://www.degruyter.com/document/doi/10.1515/nanoph-2021-0552/html}, year = 2022 }
  Link
  https://www.degruyter.com/document/doi/10.1515/nanoph-2021-0552/html
2021
1. Kolatschek, S., Nawrath, C., Bauer, S., Huang, J., Fischer, J., Sittig, R., Jetter, M., Portalupi, S. L., & Michler, P. (2021). Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating. Nano Letters, 0(0), Article 0. https://doi.org/10.1021/acs.nanolett.1c02647
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  @article{doi:10.1021/acs.nanolett.1c02647, abstract = { The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources with state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling of InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4\% with a brightness at the first lens of 23\% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g(2)(0) = 0.01 in saturation) is achieved. Finally, a good single-photon purity (g(2)(0) = 0.13) together with a high detector count rate of 191 kcps is demonstrated for a temperature of up to 77 K. }, author = {Kolatschek, Sascha and Nawrath, Cornelius and Bauer, Stephanie and Huang, Jiasheng and Fischer, Julius and Sittig, Robert and Jetter, Michael and Portalupi, Simone Luca and Michler, Peter}, doi = {10.1021/acs.nanolett.1c02647}, eprint = {https://doi.org/10.1021/acs.nanolett.1c02647}, journal = {Nano Letters}, note = {PMID: 34478316}, number = 0, pages = {null}, title = {Bright Purcell Enhanced Single-Photon Source in the Telecom O-Band Based on a Quantum Dot in a Circular Bragg Grating}, url = {/brokenurl# https://doi.org/10.1021/acs.nanolett.1c02647 }, volume = 0, year = 2021 }
  Link
  /brokenurl# https://doi.org/10.1021/acs.nanolett.1c02647
2. Bauer, S., Wang, D., Hoppe, N., Nawrath, C., Fischer, J., Witz, N., Kaschel, M., Schweikert, C., Jetter, M., Portalupi, S. L., Berroth, M., & Michler, P. (2021). Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device. Applied Physics Letters, 119(21), Article 21. https://doi.org/10.1063/5.0067749
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  @article{doi:10.1063/5.0067749, abstract = { The well-established silicon-on-insulator platform is very promising for large-scale integrated photonic and quantum photonic technologies due to the mature manufacturing technology and integration density. Here, we present an efficient and stable fiber-to-chip coupling, which enables the injection of single photons from telecom quantum dots into a silicon-on-insulator photonic chip. Two additional fibers further couple the chip to single-photon detectors. The approach chosen to achieve steady fiber-chip coupling is based on the use of grating couplers steadily packaged with angled single-mode fibers. Using this technique, coupling efficiencies between the fiber and the SOI chip as high as 69.1\% per grating coupler (including the taper losses) are reached. The effective interface between the quantum light generated by quantum dots and the silicon components is verified via the measurement of the second-order correlation function using a Hanbury–Brown and Twiss setup. With g(2)(0)=0.051±0.001, it clearly proves the single-photon nature of the injected QD photons. This demonstrates the reliability of the interfacing method and opens the route to employ telecom quantum dots as non-classical light sources with high complexity silicon photonic functionalities. }, author = {Bauer, Stephanie and Wang, Dongze and Hoppe, Niklas and Nawrath, Cornelius and Fischer, Julius and Witz, Norbert and Kaschel, Mathias and Schweikert, Christian and Jetter, Michael and Portalupi, Simone L. and Berroth, Manfred and Michler, Peter}, doi = {10.1063/5.0067749}, eprint = {https://doi.org/10.1063/5.0067749}, journal = {Applied Physics Letters}, number = 21, pages = 211101, title = {Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device}, url = {/brokenurl# https://doi.org/10.1063/5.0067749 }, volume = 119, year = 2021 }
  Link
  /brokenurl# https://doi.org/10.1063/5.0067749
2020
1. Hepp, S., Hornung, F., Bauer, S., Hesselmeier, E., Yuan, X., Jetter, M., Portalupi, S. L., Rastelli, A., & Michler, P. (2020). Purcell-enhanced single-photon emission from a strain-tunable quantum dot in a cavity-waveguide device. Appl. Phys. Lett., 117(25), Article 25. https://doi.org/10.1063/5.0033213
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  @article{hepp2020purcellenhanced, abstract = {On-chip quantum photonics is a promising route toward the implementation of complex photonic architectures on a small footprint. Therefore, different photonic components demonstrated for off-chip o...}, author = {Hepp, Stefan and Hornung, Florian and Bauer, Stephanie and Hesselmeier, Erik and Yuan, Xueyong and Jetter, Michael and Portalupi, Simone L. and Rastelli, Armando and Michler, Peter}, booktitle = {Applied Physics Letters}, comment = {doi: 10.1063/5.0033213}, doi = {10.1063/5.0033213}, issn = {00036951}, journal = {Appl. Phys. Lett.}, month = {12}, number = 25, pages = {254002--}, privnote = {doi: 10.1063/5.0033213}, publisher = {American Institute of Physics}, title = {Purcell-enhanced single-photon emission from a strain-tunable quantum dot in a cavity-waveguide device}, url = {https://doi.org/10.1063/5.0033213}, volume = 117, year = 2020 }
  Link
  https://doi.org/10.1063/5.0033213
2018
1. Hepp, S., Bauer, S., Hornung, F., Schwartz, M., Portalupi, S. L., Jetter, M., & Michler, P. (2018). Bragg grating cavities embedded into nano-photonic waveguides for Purcell enhanced quantum dot emission. Opt. Express, 26(23), Article 23. https://doi.org/10.1364/OE.26.030614
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  @article{Hepp:18, abstract = {In the present work, we demonstrate the fabrication and optical properties of Bragg grating cavities that are directly integrated into ridge waveguides along with the Purcell enhanced emission from integrated quantum dots. Measured Q-factors up to 4600 are observed in combination with resonances of the fundamental mode within a \&\#x000B1; 0.11 nm range along the full fabricated chip. The measured Purcell enhancement up to a factor of 3.5 \&\#x000B1; 0.5 shows the potential utility for state-of-the-art on-chip quantum optical experiments as realized in off-chip implementations. Our measurements are fully supported via FDTD simulations giving a theoretical Purcell enhancement up to a factor of 20 with a highly directional \&\#x003B2;dir-factor of 70 \&\#x00025;. The straightforward upscaling and robust design of the investigated Bragg grating cavity in combination with a substantial Purcell enhancement represents a major step towards large scale on-chip quantum photonic circuits.}, author = {Hepp, Stefan and Bauer, Stephanie and Hornung, Florian and Schwartz, Mario and Portalupi, Simone L. and Jetter, Michael and Michler, Peter}, doi = {10.1364/OE.26.030614}, journal = {Opt. Express}, month = {11}, number = 23, pages = {30614--30622}, publisher = {OSA}, title = {Bragg grating cavities embedded into nano-photonic waveguides for Purcell enhanced quantum dot emission}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-26-23-30614}, volume = 26, year = 2018 }
  Link
  http://www.opticsexpress.org/abstract.cfm?URI=oe-26-23-30614
2012
1. Syperek, M., Yakovlev, D. R., Yugova, I. A., Misiewicz, J., Jetter, M., Schulz, M., Michler, P., & and M. Bayer. (2012). Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots. http://prb.aps.org/abstract/PRB/v86/i12/e125320
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  @article{noauthororeditor, author = {Syperek, M. and Yakovlev, D. R. and Yugova, I. A. and Misiewicz, J. and Jetter, M. and Schulz, M. and Michler, P. and and M. Bayer}, title = {Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots}, url = {http://prb.aps.org/abstract/PRB/v86/i12/e125320}, year = 2012 }
  Link
  http://prb.aps.org/abstract/PRB/v86/i12/e125320
2006
1. Schwab, M., Kurtze, H., Auer, T., Bestermann, T., Bayer, M., Wiersig, J., Bear, N., Gies, C., Jahnke, F., Reithmaier, J. P., Forchel, A., Benyoucef, M., & Michler, P. (2006). Radiative emission dynamics of quantum dots in a single cavity micropillar. /brokenurl#NULL
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  @article{noauthororeditor, author = {Schwab, M. and Kurtze, H. and Auer, T. and Bestermann, T. and Bayer, M. and Wiersig, J. and Bear, N. and Gies, C. and Jahnke, F. and Reithmaier, J. P. and Forchel, A. and Benyoucef, M. and Michler, P.}, title = {Radiative emission dynamics of quantum dots in a single cavity micropillar}, url = {/brokenurl#NULL}, year = 2006 }
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  /brokenurl#NULL
2005
1. Ulrich, S. M., Benyoucef, M., Michler, P., Baer, N., Gartner, P., Janke, F., Schwab, M., Kurtze, H., Bayer, M., Fafard, S., & and Z. Wasilewski. (2005). Correlated photon-pair emission from a charged single quantum dot. http://prb.aps.org/abstract/PRB/v71/i23/e235328
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  @article{noauthororeditor, author = {Ulrich, S. M. and Benyoucef, M. and Michler, P. and Baer, N. and Gartner, P. and Janke, F. and Schwab, M. and Kurtze, H. and Bayer, M. and Fafard, S. and and Z. Wasilewski}, title = {Correlated photon-pair emission from a charged single quantum dot}, url = {http://prb.aps.org/abstract/PRB/v71/i23/e235328}, year = 2005 }
  Link
  http://prb.aps.org/abstract/PRB/v71/i23/e235328
2004
1. Wiersig, J., Baer, N., Gartner, P., Jahnke, F., Benyoucef, M., Ulrich, S. M., Michler, P., & Forchel, A. (2004). Optical modes of semiconductor micropillars: A theory-experiment comparison. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1366902&tag=1
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  @proceedings{noauthororeditor, author = {Wiersig, J. and Baer, N. and Gartner, P. and Jahnke, F. and Benyoucef, M. and Ulrich, S. M. and Michler, P. and Forchel, A.}, title = {Optical modes of semiconductor micropillars: A theory-experiment comparison}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1366902&tag=1}, year = 2004 }
  Link
  http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1366902&tag=1
2. Ulrich, S. M., Benyoucef, M., Michler, P., Baer, N., Gartner, P., Janke, F., Schwab, M., Kurtze, H., Bayer, M., Fafard, S., & and Z. Wasilewski. (2004). Single-photon and photon pair emission from individual (In,Ga)As quantum dots. /brokenurl#NULL
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  @proceedings{noauthororeditor, author = {Ulrich, S. M. and Benyoucef, M. and Michler, P. and Baer, N. and Gartner, P. and Janke, F. and Schwab, M. and Kurtze, H. and Bayer, M. and Fafard, S. and and Z. Wasilewski}, title = {Single-photon and photon pair emission from individual (In,Ga)As quantum dots}, url = {/brokenurl#NULL}, year = 2004 }
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  /brokenurl#NULL
2002
1. Vehse, M., Meinertz, J., Lange, O., Michler, P., Gutowski, J., Bader, S., Brüderl, G., Lell, A., & and V. Härle. (2002). Analysis of gain saturation behavior in GaN based quantum well lasers. http://onlinelibrary.wiley.com/doi/10.1002/pssc.200390083/abstract
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  @proceedings{noauthororeditor, author = {Vehse, M. and Meinertz, J. and Lange, O. and Michler, P. and Gutowski, J. and Bader, S. and Brüderl, G. and Lell, A. and and V. Härle}, title = {Analysis of gain saturation behavior in GaN based quantum well lasers}, url = {http://onlinelibrary.wiley.com/doi/10.1002/pssc.200390083/abstract}, year = 2002 }
  Link
  http://onlinelibrary.wiley.com/doi/10.1002/pssc.200390083/abstract
2. Röwe, M., Michler, P., Gutowski, J., Bader, S., Brüderl, G., Kümmler, V., Weimar, A., Lell, A., & and V. Härle. (2002). Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures. http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200212%29194:2%3C414::AID-PSSA414%3E3.0.CO;2-V/abstract
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  @proceedings{noauthororeditor, author = {Röwe, M. and Michler, P. and Gutowski, J. and Bader, S. and Brüderl, G. and Kümmler, V. and Weimar, A. and Lell, A. and and V. Härle}, title = {Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures}, url = {http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200212%29194:2%3C414::AID-PSSA414%3E3.0.CO;2-V/abstract}, year = 2002 }
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  http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200212%29194:2%3C414::AID-PSSA414%3E3.0.CO;2-V/abstract
3. Schweizer, H., Gräbeldinger, H., Dumitru, V., Jetter, M., Bader, S., Brüderl, G., Weimar, A., Lell, A., & Härle, V. (2002). Laterally coupled InGaN/GaN DFB laser diodes. Wiley Online Library. https://doi.org/10.1002/1521-396X(200208)192:2<301::AID-PSSA301>3.0.CO;2-D
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  @article{noauthororeditor, abstract = {For group III nitride‐based lasers a new approach to realise DFB lasers and arrays is presented. Laterally coupled DFB (LC‐DFB) lasers are realised to minimise processing‐induced damage and to enable post‐processing adjustment of DFB laser parameters according to the material parameters achieved after epitaxial growth. These DFB laser arrays enable one to measure the threshold and the refractive index of electrically pumped DFB lasers over a wavelength emission range of 6 nm. DFB emission is demonstrated up to 70 °C and simultaneously a small temperature shift of the DFB mode. A significantly smaller tuning range is observed compared to optically pumped DFB lasers as well as a significantly red‐shifted gain region. Furthermore, the dispersion relation gradient determined, dneff/dλ, appears significantly steeper (by a factor of six) than in the optically pumped case. These effects are attributed to incompletely screened polarisation fields in electrically pumped InGaN/GaN lasers.}, author = {Schweizer, H. and Gräbeldinger, H and Dumitru, V. and Jetter, M. and Bader, S. and Brüderl, G. and Weimar, A. and Lell, A. and Härle, V.}, doi = {https://doi.org/10.1002/1521-396X(200208)192:2<301::AID-PSSA301>3.0.CO;2-D}, journal = { Wiley Online Library }, title = {Laterally coupled InGaN/GaN DFB laser diodes}, year = 2002 }
4. Vehse, M., Michler, P., Gösling, I., Röwe, M., Gutowski, J., Bader, S., Lell, A., Brüderl, G., & and V. Härle. (2002). Influence of barrier height on optical gain and transparency density in GaN based laser structures. http://apl.aip.org/resource/1/applab/v80/i5/p755_s1
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  @article{noauthororeditor, author = {Vehse, M. and Michler, P. and Gösling, I. and Röwe, M. and Gutowski, J. and Bader, S. and Lell, A. and Brüderl, G. and and V. Härle}, title = {Influence of barrier height on optical gain and transparency density in GaN based laser structures}, url = {http://apl.aip.org/resource/1/applab/v80/i5/p755_s1}, year = 2002 }
  Link
  http://apl.aip.org/resource/1/applab/v80/i5/p755_s1
2001
1. Vehse, M., Michler, P., Gösling, I., Röwe, M., Gutowski, J., Bader, S., Lell, A., Brüderl, G., & and V. Härle. (2001). Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures. http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C109::AID-PSSA109%3E3.0.CO;2-T/abstract
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  @proceedings{noauthororeditor, author = {Vehse, M. and Michler, P. and Gösling, I. and Röwe, M. and Gutowski, J. and Bader, S. and Lell, A. and Brüderl, G. and and V. Härle}, title = {Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures}, url = {http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C109::AID-PSSA109%3E3.0.CO;2-T/abstract}, year = 2001 }
  Link
  http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C109::AID-PSSA109%3E3.0.CO;2-T/abstract
2. Röwe, M., Michler, P., Gutowski, J., Bader, S., Hahn, B., Kümmler, V., Weimar, A., Lell, A., & and V. Härle. (2001). Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures. http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C65::AID-PSSA65%3E3.0.CO;2-W/abstract
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  @proceedings{noauthororeditor, author = {Röwe, M. and Michler, P. and Gutowski, J. and Bader, S. and Hahn, B. and Kümmler, V. and Weimar, A. and Lell, A. and and V. Härle}, title = {Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures}, url = {http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C65::AID-PSSA65%3E3.0.CO;2-W/abstract}, year = 2001 }
  Link
  http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200111%29188:1%3C65::AID-PSSA65%3E3.0.CO;2-W/abstract
3. Vehse, M., Michler, P., Lange, O., Röwe, M., Gutowski, J., Bader, S., Lugauer, H.-J., Brüderl, G., Weimar, A., Lell, A., & Härle, V. (2001). Optical gain and saturation in nitride-based laser structures. http://apl.aip.org/resource/1/applab/v79/i12/p1763_s1
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  BibTeX
  @article{noauthororeditor, author = {Vehse, M. and Michler, P. and Lange, O. and Röwe, M. and Gutowski, J. and Bader, S. and Lugauer, H.-J. and Brüderl, G. and Weimar, A. and Lell, A. and Härle, V.}, title = {Optical gain and saturation in nitride-based laser structures}, url = {http://apl.aip.org/resource/1/applab/v79/i12/p1763_s1}, year = 2001 }
  Link
  http://apl.aip.org/resource/1/applab/v79/i12/p1763_s1
2000
1. Michler, P., Lange, O., Vehse, M., Gutowski, J., Bader, S., Hahn, B., Lugauer, H.-J., & Härle, V. (2000). Gain saturation in (In,Ga)N/GaN/( Al , Ga )N laser structures. http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200007%29180:1%3C391::AID-PSSA391%3E3.0.CO;2-N/abstract
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  @proceedings{noauthororeditor, author = {Michler, P. and Lange, O. and Vehse, M. and Gutowski, J. and Bader, S. and Hahn, B. and Lugauer, H.-J. and Härle, V.}, title = {Gain saturation in (In,Ga)N/GaN/( Al , Ga )N laser structures}, url = {http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200007%29180:1%3C391::AID-PSSA391%3E3.0.CO;2-N/abstract}, year = 2000 }
  Link
  http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200007%29180:1%3C391::AID-PSSA391%3E3.0.CO;2-N/abstract
1994
1. Sternschulte, H., Thonke, K., Sauer, R., Münzinger, P. C., & and P. Michler. (1994). The 1.681 eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films. http://prb.aps.org/abstract/PRB/v50/i19/p14554_1
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  @article{noauthororeditor, author = {Sternschulte, H. and Thonke, K. and Sauer, R. and Münzinger, P.C. and and P. Michler}, title = {The 1.681 eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films}, url = {http://prb.aps.org/abstract/PRB/v50/i19/p14554_1}, year = 1994 }
  Link
  http://prb.aps.org/abstract/PRB/v50/i19/p14554_1

Stephanie Bauer

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Publikationen

2023

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2022

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2021

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2020

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2018

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2012

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2006

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2005

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2004

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2002

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2001

BibTeX

Link

BibTeX

Link

BibTeX

Link

2000

BibTeX

Link

1994

BibTeX

Link

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