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Publications of AG Semiconductor quantum optics and AG Semiconductor epitaxy

Journal Publication | Review & Invited Article | Book Contribution | Patent | Conference Proceeding

Journal Publication

  • The phase boundary of superconducting niobium thin films with antidot arrays fabricated with microsphere photolithography
    D. Bothner, C. Clauss, E. Koroknay, M. Kemmler, T. Gaber, M. Jetter, M. Scheffler, P. Michler, M. Dressel, D. Koelle and R. Kleiner
    D Bothner et al 2012 Supercond. Sci. Technol. 25 065020 (url)

  • Cascaded single-photon emission from the Mollow triplet sidebands of a quantum dot
    A. Ulhaq, S. Weiler, S. M. Ulrich, R. Roßbach, M. Jetter and P. Michler
    Nature Photonics 6, 238 - 242 (2012) (url)

  • Quantum state tomography measurements on strain-tuned InxGa1-xAs/GaAs quantum dots
    K. D. Jöns, R. Hafenbrak, P. Atkinson, A. Rastelli, O. G. Schmidt, and P. Michler
    Phys. Status Solidi B 249, No. 4, 697–701 (2012) / DOI 10.1002/pssb.201100777 (url)

  • Excited-state spectroscopy of single lateral self-assembled InGaAs quantum dot molecules
    M. Heldmaier, M. Seible, C. Hermannstädter, M. Witzany, R. Roßbach, M. Jetter, P. Michler, L. Wang, A. Rastelli and O. G. Schmidt
    Physical Review B 85, 11, 115304 (2012) (url)

  • Polarization anisotropic luminescence of tunable single lateral quantum dot molecules
    C. Hermannstädter, M. Witzany, M. Heldmaier, R. Hafenbrak, K. D. Jöns, G. J. Beirne and P. Michler
    Journal of Applied Physics 111, 063526 (2012) (url)

  • Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications
    Koroknay E., Schulz W.-M., Richter D., Rengstl U., Reischle M., Bommer M., Kessler C. A., Roßbach R., Schweizer H., Jetter M. and Michler P.
    Phys. Status Solidi B, 249 (2012), p 737–746 (url)

  • Growth and spectroscopy of single lateral InGaAs/GaAs quantum dot molecules
    Matthias Heldmaier, Claus Hermannstädter, Marcus Witzany, Lijuan Wang, Jie Peng, Armando Rastelli, Gabriel Bester, Oliver G. Schmidt and Peter Michler
    Physica Status Solidi B 249, No. 4, 710–720 (2012) (url)

  • Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays
    D. Bothner and C. Clauss and E. Koroknay and M. Kemmler and T. Gaber and M. Jetter and M. Scheffler and P. Michler and M. Dressel and D. Koelle and R. Kleiner
    Appl. Phys. Lett. (100) 012601 (2012) (url)

  • Controlling quantum dot emission by integration of semiconductor nanomembranes onto piezoelectric actuators
    A. Rastelli, F. Ding, J. D. Plumhof, S. Kumar, R. Trotta, Ch. Deneke, A. Malachias, P. Atkinson, E. Zallo, T. Zander, A. Herklotz, R. Singh, V. Krapek, J. R. Schröte1, S. Kiravittaya, M. Benyoucef, R. Hafenbrak, K. D. Jöns, D. J. Thurmer, D. Grimm, G. Bester, K. Dörr, P. Michler, and O. G. Schmidt
    Phys. Status Solidi B 249, No. 4, 687–696 (2012) (url)

  • Halbleiterscheibenlaser für Spektroskopieanwendungen im roten und ultravioletten Spektralbereich
    Thomas Schwarzbäck, Hermann Kahle, Michael Jetter, Peter Michler
    Photonik 6, 46-49 (2011) (url)

  • Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm
    T. Schwarzbäck, H. Kahle, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    Applied Physics Letters 99, 261101 (2011) (url)

  • Dependence of the Redshifted and Blueshifted Photoluminescence Spectra of
    Single InxGa1-xAs/GaAs Quantum Dots on the Applied Uniaxial Stress
    K. D. Jöns, R. Hafenbrak, R. Singh, F. Ding, J. D. Plumhof, A. Rastelli, O. G. Schmidt, G. Bester, and P. Michler
    Phys. Rev. Lett. 107, 217402 (2011) (url)

  • Three-dimensional GaN for semipolar light emitters
    T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, F. Scholz
    Phys. Status Solidi B 248, No. 3, 549-560 (2011) (url)

  • Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K
    M. Bommer, W.-M. Schulz, R. Roßbach, M. Jetter, P. Michler, T. Thomay, A. Leitenstorfer, and R. Bratschitsch
    J. Appl. Phys. 110, 063108 (2011) (url)

  • Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power
    Thomas Schwarzbäck, Marcus Eichfelder, Wolfgang-Michael Schulz, Robert Roßbach , Michael Jetter, and Peter Michler
    Applied Physics B 102, 789 (2011) (url)

  • Transverse-Mode Analysis of Red-Emitting Highly Polarized Vertical-Cavity Surface-Emitting Lasers
    Susanne Weidenfeld, Marcus Eichfelder, Michael Wiesner, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, and Peter Michler
    IEEE Journal of Selected Topics in Quantum Electronics, 17, 724-729 (2011) (url)

  • Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity
    S. M. Ulrich, S. Ates, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
    Phys. Rev. Lett. 106, 247402 (2011) (url)

  • MOVPE grown quanternary AllnGaN layers for ploarization machted quatum wells and efficient active regoins
    M. Jetter, C.Waechter, A. Meyer, and P. Michler
    Phys. Status Solidi C, 1– 4 (2011)
    DOI 10.1002/pssc.201000999 (url)

  • Lasing properties of InP/(Ga_0.51In_0.49)P quantum dots in microdisk cavities
    M. Witzany, R. Roßbach, W.-M. Schulz, M.Jetter, P. Michler, T-L. Liu, E. Hu, J. Wiersig, and F. Jahnke
    Phys. Rev.B 83, 205305 (2011) (url)

  • Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1-x)As and In(x)Ga(1-x)As/GaAs quantum dots
    J. D. Plumhof, V. Krápek, F. Ding, K. D. Jöns, R. Hafenbrak, P. Klenovský, A. Herklotz, K. Dörr, P. Michler, A. Rastelli, and O. G. Schmidt
    Phys. Rev. B 83, 121302 (2011)
    10.1103/PhysRevB.83.121302 (url)

  • Highly indistinguishable photons from a quantum dot in a microcavity
    Stefanie Weiler, Ata Ulhaq, Sven M. Ulrich, Stephan Reitzenstein, Andreas Löffler, Alfred Forchel, and Peter Michler
    Phys. Status Solidi B 248, No.4, 867-871 (2011) (url)

  • Spectral features in different sized InGaN/GaN micropyramids
    Clemens Wächter, Alexander Meyer, Sebastian Metzner, Michael Jetter, Frank Bertram,Jürgen Christen, and Peter Michler
    Phys. Status Solidi C 8, No. 7–8, 2387–2389 (2011) / DOI 10.1002/pssc.201001011

  • Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (1122) and (1011) pyramid facets
    Sebastian Metzner, Frank Bertram, Christopher Karbaum, Thomas Hempel, Thomas Wunderer, Stephan Schwaiger, Frank Lipski, Ferdinand Scholz, Clemens Wächter, Michael Jetter, Peter Michler, and Jürgen Christen
    Phys. Status Solidi B 248, No. 3, 632-637 (2011) (url)

  • High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets
    C. Wächter, A. Meyer, S. Metzner, M. Jetter, F. Bertram, J. Christen and P. Michler
    Phys. Status Solidi B 248, No. 3, 605–610 (2011) (url)

  • Emission characteristics of a highly correlated system of a quantum dot coupled to two distinct micropillar cavity modes
    S. Weiler, A. Ulhaq, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
    Phys. Rev. B 82, 205326 (2010) (url)

  • Triggered single-photon emission from electrically excited quantum dots in the red spectral range
    M. Reischle, C. Kessler, W.-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    Applied Physics Letters 97, 143513 (2010) (url)

  • Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
    M. Jetter, C. Wächter, A. Meyer, M.Feneberg, K. Thonke and P. Michler
    J. Crystal Growth 315, No. 1, 254-257(2010) (url)

  • Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode
    A. Ulhaq, S. Ates, S. Weiler, S. M. Ulrich, S. Reitzenstein, A. Löffler, S. Höfling, L. Worschech, A. Forchel, and P. Michler
    Phys. Rev. B 82, 045307 (2010) (url)

  • Low-density InP quantum dots embedded in Ga0.51In0.49 P with high optical quality realized by a strain inducing layer
    Daniel Richter, Robert Roßbach, Wolfgang-Michael Schulz, Elisabeth Koroknay, Christian Kessler, Michael Jetter, and Peter Michler
    Applied Physics Letters 97, 063107 (2010) (url)

  • Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules
    C. Hermannstädter, G. J. Beirne, M. Witzany, M. Heldmaier, J. Peng, G. Bester, L. Wang, A. Rastelli, O. G. Schmidt, and P. Michler
    Phys. Rev. B 82, 085309 (2010) (url)

  • Optical properties of red emitting self-assembled InP/(Al0.20 Ga0.80 )0.51 In0.49 P quantum dot based micropillars
    Wolfgang-Michael Schulz, Tim Thomay, Marcus Eichfelder, Moritz Bommer, Michael Wiesner, Robert Roßbach, Michael Jetter, Rudolf Bratschitsch, Alfred Leitenstorfer and Peter Michler
    Optics Express, Vol. 18, Issue 12, pp. 12543-12551 (2010) (url)

  • Cathodoluminescence Microscopy of Self-Organized InGaN Nano-Structures on GaN Pyramids
    F Bertram, S Metzner, J Christen, M Jetter, C Wächter and P Michler
    Microscopy and Microanalysis, 16 (Suppl. 2)2010

  • Enhanced photoluminescence from self-organized rubrene single crystal surface structures
    R. J. Stöhr, G. J. Beirne, P. Michler, R. Scholz, J. Wrachtrup and J. Pflaum
    APPLIED PHYSICS LETTERS 96, 231902 (2010) (url)

  • Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths
    Daniel Richter , Robert Hafenbrak , Klaus D Jöns , Wolfgang-Michael Schulz , Marcus Eichfelder , Matthias Heldmaier , Robert Roßbach , Michael Jetter and Peter Michler
    Nanotechnology 21 125606 (2010) (url)

  • Heterogeneous confinement in laterally coupled {InGaAs/GaAs} quantum dot molecules under lateral electric fields
    J. Peng , C. Hermannstädter, M. Witzany, M. Heldmaier, L. Wang, S. Kiravittaya, A. Rastelli, O. G. Schmidt, P. Michler and G. Bester
    Phys. Rev. B 81, 205315 (2010)
    doi: 10.1103/PhysRevB.81.205315 (url)

  • Non-resonant dot-cavity coupling and its potential for resonant single-quantum-dot spectroscopy
    S. Ates, S. M. Ulrich, A. Ulhaq, S. Reitzenstein, A. Löffler, S. Höfling, A. Forchel, and P. Michler
    Nature Photonics 3, 724 - 728 (2009) (url)

  • Post-Selected Indistinguishable Photons from the Resonance Fluorescence of a Single Quantum Dot in a Microcavity
    S. Ates, S. M. Ulrich*, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler
    Phys. Rev. Lett. 103, 167402 (2009) (url)

  • Low Threshold InP/AlGaInP Quantum Dot In-Plane Laser Emitting at 638 nm
    Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler
    Appl. Phys. Express 2, 112501 (2009) (url)

  • Room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in a vertical microcavity
    M. Eichfelder, W.-M. Schulz, M. Reischle, M. Wiesner, R. Roßbach, M. Jetter, and P. Michler
    Applied Physics Letters 95, 131107 (2009) (url)
    (Reselected in Virtual Journal of Nanoscale Science & Technology)

  • Optical and structural properties of InP quantum dots embedded in (AlxGa1−x)0.51In0.49P
    W.-M. Schulz, R. Roßbach, M. Reischle, G. J. Beirne, M. Bommer, M. Jetter, and P. Michler
    Phys. Rev. B 79, 035329 (2009) (url)

  • Red VCSEL for high-speed data communication via POF
    M. Jetter, R. Roßbach, P. Michler
    Photonic International *1*, 33 (2009) (url)

  • Electrically pumped single-photon emission in the visible spectral range up to 80 K
    M. Reischle, G. J. Beirne, W.-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    Opt. Express 16, 12771 (2008) (url)

  • Rote VCSEL für Hochgeschwindigkeits-Datenübertragung über POF
    M. Jetter, R. Roßbach, P. Michler
    Photonik 1, 56 (2008) (url)

  • Red single-photon emission from an InP/GaInP quantum dot embedded in a planar monolithic microcavity
    Robert Roßbach, Matthias Reischle, Gareth J. Beirne, Michael Jetter, and Peter Michler
    Appl. Phys. Lett. 92, 071105 (2008)

  • Influence of the Dark Exciton State on the Optical and Quantum Optical Properties of Single Quantum Dots
    M. Reischle, G. J. Beirne, R. Roßbach, M. Jetter, and P. Michler
    Phys. Rev. Lett. 101, 146402 (2008) (url)

  • Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules
    L. Wang, A. Rastelli, S. Kiravittaya, P. Atkinson, F. Ding, C. C. Bof Bufon, C. Hermannstädter, M. Witzany, G. J. Beirne, P. Michler and O. G. Schmidt
    New J. Phys. 10, 045010 (2008),
    doi: 10.1088/1367-2630/10/4/045010 (url)

  • Influence of the spontaneous optical emission factor beta on the first-order coherence of a semiconductor microcavity laser
    S. Ates, C. Gies, S. M. Ulrich, J. Wiersig, S. Reitzenstein, A. Löffler, A. Forchel, F. Jahnke, and P. Michler
    Phys. Rev. B 78, 155319 (2008)

  • Regions of different confinement in low-dimensional AlInGaN quantum structures
    A. Gröning, V. Pérez-Solórzano, M. Jetter, and H. Schweizer
    Advances in OptoElectronics, vol 2007, Article ID 69568, (2007)

  • Bandgap measurements of direct and indirect semiconductors using monochromated electrons
    L. Gu, V. Srot, W. Sigle, C. Koch, P. van Aken, F. Scholz, S. B. Thapa, C. Kirchner, M. Jetter, and M. Rühle
    Phys. Rev. B 75, 195214 (2007)

  • Photon Statistics of Semiconductor Microcavity Lasers
    S. M. Ulrich, C. Gies, S. Ates, J. Wiersig, S. Reitzenstein, C. Hofmann, A. Löffler, A. Forchel, F. Jahnke, and P. Michler
    Phys. Rev. Lett. 98, 043906 (2007)

  • Coherence properties of high-beta elliptical semiconductor micropillar lasers
    S. Ates, S. M. Ulrich, P. Michler, S. Reitzenstein, A. Löffler, and A. Forchel
    Appl. Phys. Lett. 90, 161111 (2007)

  • Time-resolved photoluminescence of semipolar GaInN/GaN multiquantum well structures
    T. Wunderer, P. Brückner, J. Hertkorn, F. Scholz, G. J. Beirne, M. Jetter, P. Michler, M. Feneberg and K. Thonke
    Appl. Phys. Lett. 90, 171123 (2007)

  • Electronic shell structure and carrier dynamics of high aspect ratio InP single quantum dots
    G. J. Beirne, M. Reischle, R. Rossbach, W. M. Schulz, M. Jetter, J. Seebeck, P. Gartner, C. Gies, F. Jahnke, and P. Michler
    Phys. Rev. B 75, 195302 (2007)

  • Nonresonant tunneling in single asymmetric pairs of vertically stacked InP quantum dots
    M. Reischle, G. J. Beirne, R. Roßbach, M. Jetter, H. Schweizer, and P. Michler
    Phys. Rev. B 76, 085338 (2007)

  • Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K
    R. Hafenbrak, S. M. Ulrich, P. Michler, L. Wang, A. Rastelli and O. G. Schmidt
    New J. Phys. 9 (September 2007) 315
    doi:10.1088/1367-2630/9/9/315 (url)

  • Influence of lateral electric fields on multiexcitonic transitions and fine structure of single quantum dots
    M. M. Vogel, S. M. Ulrich, R. Hafenbrak, P. Michler, L. Wang, A. Rastelli and O. G. Schmidt
    Appl. Phys. Lett. 91, 051904 (2007)
    doi:10.1063/1.2761522 (url)

  • In situ laser microprocessing of single self-assembled quantum dots and optical microcavities
    A. Rastelli, A. Ulhaq, S. Kirravittaya, L. Wang, O. G. Schmidt and A. Zrenner
    Appl. Phys. Lett. *90*, 073120 (2007) (url)

  • Quantum Light Emission of two lateral tunnel-coupled (In,Ga)As/GaAs Quantum Dots controlled by a tunable static electric Field
    G. J. Beirne, C. Hermannstädter, L. Wang, A. Rastelli, O. G. Schmidt, and P. Michler
    Phys. Rev. Lett. 96, 137401 (2006) (url)

  • Radiative emission dynamics of quantum dots in a single cavity micropillar
    M. Schwab, H. Kurtze, T. Auer, T. Bestermann, M. Bayer, J. Wiersig, N. Bear, C. Gies, F. Jahnke, J. P. Reithmaier, A. Forchel, M. Benyoucef, P. Michler
    Phys. Rev. B 74, 045323 (2006)

  • Temperature dependent optical properties of single hierarchically self-assembled GaAs/AlGaAs quantum dots
    M. Benyoucef, A. Rastelli, O. G. Schmidt, S. M. Ulrich, P. Michler
    Nanoscale Res. Lett., DOI: 10.1007/s11671-006-9019-3, (2006)

  • Analog Modulation of 650 nm VCSEL
    T. Ballmann, R. Roßbach, R. Butendeich, B. Raabe, M. Jetter, F. Scholz, and H. Schweizer
    IEEE Photonics Technology Letters 18, S. 583 (2006).

  • Single-photon emission from a type-B InP/GaInP quantum dot
    G. J. Beirne, P. Michler, M. Jetter, H. Schweizer
    J. Appl. Phys. 98, 093522 (2005) (url)

  • Correlated photon-pair emission from a charged single quantum dot
    S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Janke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, and Z. Wasilewski
    Phys. Rev. B. 71, 235328 (2005) (url)

  • Correlated photon pairs from single (In,Ga)As/GaAs quantum dot in pillar microcavities
    M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, A. Forchel
    J. Appl. Phys. 97, 023101 (2005) (url)

  • Evidence of different confinement regions in site-controlled pyramidal InGaN quantum dots
    V. Pérez-Solórzano, A. Gröning, H. Schweizer and M. Jetter
    Phys. Stat. Sol. (b) 242 (2005) R97

  • Near-red emission from site-controlled pyramidal InGaN quantum dots
    V. Pérez-Solórzano, A. Gröning, M. Jetter, T. Riemann, and J. Christen
    Appl. Phys. Lett. 87 (2005) 163121

  • Selective Growth of GaInN Quantum Dot Structures
    V. Pérez-Solórzano, M. Ubl, H. Gräbeldinger, A. Gröning, H. Schweizer and M. Jetter
    Physica E 26 (2005) 133

  • Self-Assembled quantum dots for single-dot optical investigations
    A. Rastelli, S. M. Ulrich, E.-M. Pavelescu, T. Leinonen, M. Pessa, P. Michler, O. G. Schmidt
    Superlattices and Microstructures 36 , 181-191 (2004) (url)

  • Enhanced correlation photon pair emission from a pillar microcavity
    M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
    New J. Phys. 6 , 91 (2004) (url)

  • Green monolithic II-VI vertical-cavity surface-emitting laser emitting at room temperature
    C. Kruse, S. M. Ulrich, G. Alexe, E. Roventa, R. Kröger, B. Brendemühl, P. Michler, J. Gutowski, and D. Hommel
    Phys. Stat. Sol. (b) 241 , No. 3, 731 (2004) (url)

  • Selective Growth of GaInN Quantum Dot Structures
    M. Jetter, V. Pérez-Solórzano, A. Gröning, M. Ubl, H. Gräbeldinger and H. Schweizer
    J. Crystal Growth 272 (2004) 204

  • Red VCSEL for High-Temperature Applications
    R. Roßbach, T. Ballmann, R. Butendeich, H. Schweizer, F. Scholz and M. Jetter
    J. Crystal Growth 272 (2004) 549

  • Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE
    V. Pérez-Solórzano, A. Gröning, R. Härle, H. Schweizer and M. Jetter
    J. Crystal Growth 272 (2004) 386

  • The Growth of Self-Assembled AlxInyGa1-x-yN Quantum Dots by MOVPE
    V. Pérez-Solórzano, A. Gröning, H. Schweizer and M. Jetter
    J. Crystal Growth 272 (2004) 186

  • Triggered polarization-correlated photon pairs from a single CdSe quantum dot
    S. M. Ulrich, S. Strauf, P. Michler, G. Bacher, and A. Forchel
    Appl. Phys. Lett. 83 , 1848 (2003). (url)

  • Optical Studies of GaInP/GaP Quantum Dots
    M. Jetter, M. Rossi, J. Porsche, F. Scholz, H. Schweizer, T. J. Glynn, and G. J. Beirne
    Journal of Luminescence, 102, 1 (2003) (url)

  • 160°C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers
    R. Roßbach, R. Butendeich, T. Ballmann, B. Raabe, M. Jetter, H. Schweizer and F. Scholz
    Electron. Lett. 39 1654 (2003)

  • Investigations about series resistance of MOVPE grown GaN laser structures
    F. Scholz, G. Moutchnik, V. Dumitru, R. Härle, H. Schweizer
    J. Crystal Growth 248 (2003) 507-512

  • Single photon emission of CdSe quantum dots at temperatures up to 200 K
    K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel
    Appl. Phys. Lett. 81 , 2920 (2002) (url)

  • Quantum optical studies on individual acceptor bound excitons in a semiconductor
    S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, and A. Forchel
    Phys. Rev. Lett. 89 , 177403 (2002) (url)

  • Influence of barrier height on optical gain and transparency density in GaN based laser structures
    M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle
    Appl. Phys. Lett., 80 , 755 (2002) (url)

  • Photoluminescence Studies on InGaN/GaN Quantum Dots
    M. Jetter, V. Perez-Solorzano, Y. Kobayashi, M. Ost, F. Scholz, and H. Schweizer
    phys. stat. sol. (a) 192 (1) 91-96 (2002)

  • Initial Experiments to Obtain Self-Assembled GaInN Quantum Islands by MOVPE
    V. Perez-Solorzano, Y. Kobayashi, M. Jetter, H. Schweizer, F. Scholz, E. Hahn, and D. Gerthsen
    phys. stat. sol. (a) 192 (2) 412-416 (2002)

  • Direct evidence for the trigonal symmetry of shallow phosporus acceptors in ZnSe
    J. J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournie, J. P. Faurie
    Phys. Rev. B 64 , 205206, (2001) (url)

  • Optical gain and saturation in nitride-based laser structures
    M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, V. Härle
    Appl. Phys. Lett. 79 , 1763-1765 (2001) (url)

  • Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells
    M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars
    Semicond. Sci. Technol. 16 , 406-412, (2001) (url)

  • Cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode
    A. Kiraz, P. Michler, C. Becher, Lidong Zhang, E. Hu, W.V. Schoenfeld, P. M. Petroff and A. Imamoglu
    Appl. Phys. Lett. 78 , 3932 (2001) (url)

  • Nonclassical radiation from a single self-assembled InAs quantum dot
    C. Becher, A. Kiraz, P. Michler, A. Imamoglu, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, and E. Hu
    Phys. Rev. B 63 , 121312(R) (2001) (url)

  • A quantum dot single photon turnstile device
    P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, E. Hu and A. Imamoglu
    Science 290 , 2282 (2000) (url)

  • Quantum correlation between photons from a single quantum dot at room temperature
    P. Michler, A. Imamoglu, M. D. Mason, P. J. Carson, G. F. Strouse, and S. K. Buratto
    Nature 406 , 968 (2000) (url)

  • Laser emission from quantum dots in microdisk structures
    P. Michler, A. Kiraz, Lidong Zhang, C. Becher, E. Hu, and A. Imamoglu
    Appl. Phys. Lett. 77 , 184 (2000) (url)

  • The negatively charged trion in ZnSe single quantum wells with very low electron densities
    O. Homburg, K. Sebald, P. Michler, J. Gutowski, H. Wenisch, and D. Hommel
    Phys. Rev. B 62 , 7413 (2000) (url)

  • Temperature dependence of InP/GaInP quantum dot photoluminescence
    G. J. Beirne, I. L. Farrell, C. M. Grogan, J. O. Connolly, G. M. O'Connor and T. J. Glynn
    Microelectronic Engineering 51-52, 73 (2000) (url)

  • Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitions in (Zn,Cd)Se/Zn(S,Se) structures
    T. Lilienkamp, P. Michler, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. Hommel
    J. Appl. Phys. 86, 4360 (1999) (url)

  • Biexcitonic gain characteristics in ZnSe-based lasers with binary wells
    O. Homburg, P. Michler, R. Heinecke, J. Gutowski, H. Wenisch, M. Behringer, and D . Hommel
    Phys. Rev. B 60 , 5743 (1999) (url)

  • Optically induced Stark shift in DFB resonators
    M. Jetter, H. Stalzer, M. Körbl, J. Porsche, F. Scholz, H. Schweizer
    phys. stat. sol. (b) 215, 269 (1999)

  • Electric Field Dependent Absorption of ZnSe-based Quantum Wells: The transition from 2-dimensional to 3-dimensional Behavior
    D. Merbach, E. Schöll, W. Ebeling, P. Michler, and J. Gutowski
    Phys. Rev. B. 58 , 10709 - 20 (1998) (url)

  • Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue-green spectralregion
    P. Michler, T. Lilienkamp, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer and D. Hommel
    Appl. Phys. Lett. 72 , 3320 - 22 (1998) (url)

  • Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers
    P. Michler, M. Vehse, J. Gutowski, K. Behringer, D. Hommel, M. F. Pereira, and K. Henneberger
    Phys. Rev. B 58, 2055 - 63 (1998) (url)

  • Picosecond lasing dynamics of gain-switched (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers
    P. Michler, U. Neukirch, K. Wundke, J. Gutowski, K. Behringer, and D. Hommel
    J. Appl. Phys. 82 , 548 - 51 (1997) (url)

  • Dynamics of dual-wavelength emission from a coupled semiconductor microcavity laser
    P. Michler, M. Hilpert, and G. Reiner
    Appl. Phys. Lett. 70 , 2073 - 75 (1997) (url)

  • Emission dynamics of In 0.2 Ga 0.8 As/GaAs l - and 2 l -microcavity lasers
    P. Michler, M. Hilpert, W. W. Rühle, H. D. Wolf, D. Bernklau, and H. Riechert
    Appl. Phys. Lett. 68 , 156 - 58 (1996) (url)

  • Time-bandwidth product of gain-switched In 0.2 Ga 0.8 As/GaAs microcavity lasers
    P. Michler, W. W. Rühle, G. Reiner, K. J. Ebeling, and A. Moritz
    Appl. Phys. Lett. 67 , 1363 - 65 (1995) (url)

  • Transient pulse response of In 0.2 Ga 0.8 As/GaAs microcavity lasers
    P. Michler, A. Lohner, W. W. Rühle and G. Reiner
    Appl. Phys. Lett. 66 , 1599 - 01 (1995) (url)

  • Nonradiative recombination via strongly localized defects in quantum wells
    P. Michler, T. Forner, V. Hofsäß, F. Prins, K. Zieger, F. Scholz, and A. Hangleiter
    Phys. Rev. B 49 , 16632 - 36 (1994) (url)

  • The 1.681 eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films
    H. Sternschulte, K. Thonke, R. Sauer, P.C. Münzinger, and P. Michler
    Phys. Rev. B. 50 , 14554 - 60 (1994) (url)

  • Indirect bandgap transition in strained GaInAs/InP quantum well structures
    Härle, H. Bolay, E. Lux, F. Scholz, P. Michler A. Moritz, T. Forner, and A. Hangleiter
    J. Appl. Phys. 75 , 5067 - 71 (1994) (url)

  • Direct-to-indirect energy gap transition in strained Ga x In 1-x As/InP quantum wells
    P. Michler, A. Hangleiter, A. Moritz, G. Fuchs, V. Härle, and F. Scholz
    Phys. Rev. B 48 , 11991 - 93 (1993) (url)

  • Influence of exciton ionization on recombination dynamics in In 0.53 Ga 0.47 As/InP quantum wells
    P. Michler, A. Hangleiter, A. Moritz, V. Härle, and F. Scholz
    Phys. Rev. B 47 , 1671 - 74 (1993) (Rapid Comm.) (url)

  • Identification of a nonradiative recombination center in GaAs
    P. Michler, A. Hangleiter, R. Dieter, and F. Scholz
    J. Appl. Phys. 72 , 4449 - 51 (1992) (url)

  • Influence of barrier height on carrier lifetime in Ga 1-y In y P/(Al x Ga 1-x ) 1-y In y P single quantum wells
    P. Michler, A. Hangleiter, M. Moser, M. Geiger, and F. Scholz
    Phys. Rev. B 46 , 7280 - 83 (1992) (Rapid Comm.) (url)

  • MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications
    R.J. Dieter, F. Scholz, W. Martin, A. Hangleiter, A. Dörnen, P. Michler, W. Kürner, and B. Lu
    Microelectronic Engineering 18 , 189 - 205 (1992) (url)

Journal Publication | Review & Invited Article | Book Contribution | Patent | Conference Proceeding

Review & Invited Article

  • Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity
    C. Hermannstädter, M. Witzany, G. J. Beirne, W.-M. Schulz, M. Eichfelder, R. Rossbach, M. Jetter, P. Michler, L. Wang, A. Rastelli, and O. G. Schmidt
    J. Appl. Phys. 105, 122408 (2009); doi:10.1063/1.3117234
    selected for the Virtual Journal of Nanoscale Science & Technology vol. 19, 26 (June 29, 2009) (url)

  • Single entangled photon pair emission from an InGaAs/GaAs quantum dot up to temperatures of 30 K
    R. Hafenbrak, S. M. Ulrich, L. Wang, A. Rastelli, O. G. Schmidt, P. Michler
    Physica status solidi (c) 6, No. 2 389-394 (2009)
    *DOI*10.1002/pssc.200880333 (url)

  • Emission Characteristics, Photon Statistics and Coherence Properties of high-ß Semiconductor Micropillar Lasers
    S. M. Ulrich, S. Ates, P. Michler, C. Gies, J. Wiersig, F. Jahnke, S. Reitzenstein, C. Hofmann, A. Löffler,and A. Forchel
    Adv. Solid State Phys. 47, 3 – 15 (2008) (url)

  • Starke Kopplung im Festkörper
    P. Michler
    Physik Journal 4 (2005) Nr. 1, 16-17

  • Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures
    M. Röwe, M. Vehse, P. Michler, J. Gutowski, S. Heppel, and A. Hangleiter
    phys. stat. sol. (c) 0 1860-1877 (2003) (url)

  • Identische Photonen "auf Bestellung"
    S. Strauf and P. Michler
    Physik Journal 1 (2002) Nr. 12, 20-21 (url)

  • Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing
    J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, and T. Voss
    phys. stat. sol. (b) 234 , 70-83 (2002) (url)

  • Quantum dots break new ground
    P. Michler
    Physics World, March 2002, Section: Physics in Action, p.27 (url)

  • On the way to the II-VI quantum dot VCSEL
    T. Passow, M. Klude, C. Kruse, K. Leonardi, R. Kröger, G. Alexe, K. Sebald, S. M. Ulrich, P. Michler, J. Gutowski, H. Heinke, D. Hommel, J. Gutowski (invited)
    B. Kramer (Ed.): Adv. in Solid State Phys. 42, 13-25 (2002), Springer-Verlag Berlin Heidelberg (url)

  • Photonen auf Bestellung
    P. Michler und C. Becher
    Physikalische Blätter 57 (2001), Nr. 9, 55 – 61. (url)

  • A Quantum Dot Single Photon Source
    P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, E. Hu, and A. Imamoglu
    B. Kramer (Ed.): Adv. in Solid State Phys. 41, 3-14 (2001), Springer-Verlag Berlin Heidelberg 2001 (url)

Journal Publication | Review & Invited Article | Book Contribution | Patent | Conference Proceeding

Book Contribution

  • Quantum optical and electronic properties of InP/(Al,Ga)InP quantum dots in view of their potential in quantum information devices
    M. Reischle
    Verlag Dr. Hut, München, 2010 (url)

  • Single Semiconductor Quantum Dots
    P. Michler (Editor)
    P. Michler (Ed.): Single Semiconductor Quantum Dots, NanoScience and Technology (Springer, Berlin, Heidelberg, 2009)

  • Quantum Dot Single-Photon Sources
    P. Michler
    P. Michler (Ed.): Single Semiconductor Quantum Dots, NanoScience and Technology (Springer, Berlin, Heidelberg, 2009)

  • Quantum optical studies of single coupled quantum dot pairs
    G. J. Beirne, M. Jetter, and P. Michler,
    O. Benson and F. Henneberger (Ed.): Semiconductor Quantum Bits, Pan Stanford Publishing Pte. Ltd. (Singapore), July 2008

  • Single Quantum Dots
    P. Michler (Editor)
    P. Michler (Ed.): Single Quantum Dots, Topics Appl. Phys. 90 (Springer, Berlin, Heidelberg, 2003) (url)

  • Nonclassical light from single semiconductor quantum dots
    P. Michler
    P. Michler (Ed.): Single Quantum Dots, Topics Appl. Phys. 90 (Springer, Berlin, Heidelberg, 2003) (url)

  • Quantum-Dot Lasers; in Single Quantum Dots: Fundamentals, Applications and New Concepts
    H. Schweizer, M. Jetter, F. Scholz
    P. Michler (Ed.): Single Quantum Dots, Topics Appl. Phys. 90 (Springer, Berlin, Heidelberg, 2003)

  • Zn and Cd Compounds (except for CdTe),Solid Solutions: Electronic Properties,Impurities and Defects, Transport Properties, Optical roperties
    J Gutowski,U. Neukirch,P. Michler(invited)
    Landolt-Börnstein,New Series,Vol. III/41 B, Eds. O. Madelung,U. Rössler, M. Schulz Subvolume B: II-VI and I-VII Compunds; Semimagnetic Semiconductors Edited by U.Rössler, Springer (Berlin) 1999

  • Emission dynamics of microcavity vertical surface emitting lasers
    P. Michler
    Book Series from Gordon and Breach, editor M. O. Manasreh: Optoelectronic Properties of Semiconductor Quantum Wells and Supperlattices, Volume: Strained-Layer Quantum-Wells and Their Applications, (1997), p 389- 431 (url)

  • Photoluminescence studies on GaInAs/InP Quantum Wells
    F. Scholz, G. Frankowsky, A. Hangleiter, V. Härle, P. Michler, D. Ottenwälder, K. Streubel, and C. Y. Tsai
    CRC-Handbook of Optical Properties, Vol. II, Optics of small Particles, Interfaces, and Surfaces (eds. R. E. Hummel and P. Wißman) p. 55 - 82 (1997) (url)

Journal Publication | Review & Invited Article | Book Contribution | Patent | Conference Proceeding

Patent

  • Photon Emitter and Data Transmission Device
    P. Michler
    International registration number: WO 03/001636 A1
    Reference number: PCT/DE02/01895 (url)

Journal Publication | Review & Invited Article | Book Contribution | Patent | Conference Proceeding

Conference Proceeding

  • Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs
    Thomas Schwarzbäck, Hermann Kahle, Michael Jetter, and Peter Michler
    Proc. SPIE 8432, 843209 (2012) (url)

  • Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV
    Thomas Schwarzbäck, Hermann Kahle, Michael Jetter, and Peter Michler
    Proc. SPIE 8432, 84320W (2012) (url)

  • UV laser emission around 330 nm via intracavity frequency doubling of a tunable red AlGaInP-VECSEL
    Hermann Kahle, Thomas Schwarzbäck, Marcus Eichfelder, Robert Roßbach, Michael Jetter and Peter Michler
    Proc. SPIE 8242, 82420M (2012) (url)

  • Electroluminescence of InGaN/GaN micropyramids
    C. Wächter, J. Mack, S. Metzner, M. Jetter, F. Bertram, J. Christen and P. Michler
    Proceedings of the 14th European Workshop on Metalorganic Vapor-Phase Epitaxy, Wroclaw, June 2011

  • Investigations on the surface quality of prepatterned and overgrown GaAs substrates for lateral positioning of quantum dots
    E. Koroknay, U. Rengstl, C. Wächter, K. Jöns, M. Jetter, P. Michler
    Proceedings of the 14th European Workshop on Metalorganic Vapor-Phase Epitaxy, Wroclaw, Poland, June 2011

  • Epitaxial approaches for III-V photonics on silicon
    M. Wiesner, M. Etter, W.-M. Schulz, J. Werner, M. Oehme, J. Schulze, R. Roßbach, M. Jetter, and P. Michler
    Proceedings of the 14th European Workshop on Metalorganic Vapor-Phase Epitaxy, Wroclaw, Poland, June 2011

  • Polarization characteristics of GaInP QW-VCSEL and integration of multiple oxidation layers
    Susanne Weidenfeld, Marcus Eichfelder, Hendrik Niederbracht, Michael Wiesner, Robert Roßbach, Michael Jetter and Peter Michler
    Proceedings of the 14th European Workshop on Metalorganic Vapor-Phase Epitaxy, Wroclaw, Poland, June 2011

  • Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm
    Thomas Schwarzbäck, Hermann Kahle, Marcus Eichfelder, Wolfgang-Michael Schulz, Robert Roßbach , Michael Jetter, and Peter Michler
    Proc. SPIE 7919, 79190B (2011) (url)

  • InP quantum dots in pillar microcavities - mode spectra and single-photon emission
    M Bommer, W-M Schulz, T Thomay, M Tomas, R Roßbach, M Jetter, A Leitenstorfer, R Bratschitsch and P Michler
    J. Phys.: Conf. Ser. 210 012010 (2010) (url)

  • High-frequency Triggered Single-Photon Emission From Electrically Driven InP/(Al,Ga)InP Quantum Dots
    Christian A. Kessler, Matthias Reischle, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Rossbach, Michael Jetter and Peter Michler
    AIP Conf. Proc. 1399, pp. 981-982,PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, July 2010 (url)

  • AlGaInP-based Vertical-Cavity Surface-Emitting Lasers for Sensoring and Polarization Switching
    M. Wiesner, S. Weidenfeld, M. Eichfelder, F. Schaal, C. Pruss, W. Osten, R. Roßbach, M. Jetter, and P. Michler
    AIP Conf. Proc. 1399, 971 (2011), Seoul, Korea (url)

  • Approaches for III/V Photonics on Si
    M. Wiesner, W.-M. Schulz, E. A. Angelopoulos, J. N. Burghartz, J. Werner, M. Oehme, J. Schulze,R. Roßbach, M. Jetter, and P. Michler
    AIP Conf. Proc. 1399, 261 (2011),Seoul, Korea (url)

  • Pulsed single-photon resonant-cavity quantum dot LED
    W.-M. Schulz, M. Eichfelder, M. Reischle, C. Kessler, R. Roßbach, M. Jetter, and P. Michler
    Journal of Crystal Growth 315, No. 1, 127-130(2011) (url)

  • InP/AlGaInP quantum dot laser emitting at 638 nm
    W.-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    Journal of Crystal Growth 315, No. 1, 123-126 (2011) (url)

  • Growth and characterization of electrically pumped red-emitting VCSEL with embedded InP/AlGaInP quantumdots
    M. Eichfelder, W.-M. Schulz, M. Reischle, M. Wiesner, R. Roßbach, M. Jetter and P. Michler
    Journal of Crystal Growth 315, No. 1, 131-133 (2010) (url)

  • MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots
    D. Richter, R. Hafenbrak, K. D. Jöns, W.-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter and P. Michler
    Journal of Physics Conference Series 245, 012009 (2010) (url)

  • InP quantum dots for applications in laser devices and future solid-state quantum gates
    E. Koroknay, W-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter and P. Michler
    J. Phys.: Conf. Ser. 245 012077 (2010) (url)

  • Smooth transition into stimulated emission of InP quantum dots based high-Q microdisk cavities
    M. Witzany, R. Roßbach, W. M. Schulz, M. Jetter, T. L. Liu, E. Hu and P. Michler
    Journal of Physics Conference Series 210, 012008 (2010) (url)

  • Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al0.20 Ga0.80 )0.51 In0.49 P quantum dots
    Marcus Eichfelder, Wolfgang-Michael Schulz, Matthias Reischle, Michael Wiesner, Robert Roßbach, Michael Jetter and Peter Michler
    Journal of Physics Conference Series 210, 012009 (2010) (url)

  • DC and pulsed electrical excitation of single quantum dots
    Matthias Reischle, Christian Kessler, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter and Peter Michler
    Proc. SPIE, Vol. 7727, 77270N (2010); doi:10.1117/12.853884 (url)

  • Red VCSEL (655 nm) for POF applications
    M. Wiesner, S. Weidenfeld, M. Eichfelder, R. Roßbach, M. Jetter and P. Michler
    16. ITG-Fachtagung "Kommunikationskabelnetze", Köln (2009)

  • Beam profile characteristics of red VCSEL with oxide-confined aperture
    Susanne Weidenfeld, Michael Wiesner, Marcus Eichfelder, Michael-Wolfgang Schulz, Robert Roßbach, Michael Jetter and Peter Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • Influence of the structural properties of semipolar substrates on the luminescence of semipolar InGaN quantum wells
    C. Wächter, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, June 2009

  • Characteristics of AlxInyGa1-x-yN quantum dots deposited by pulsed metal-organic epitaxy
    M. Jetter, M. Bommer, G. J. Beirne, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, June 2009

  • Red emission from InP-quantum dot based AlGaAs micropillars
    R. Roßbach, W.-M. Schulz, M. Bommer, M. Eichfelder, T. Thomay, M. Tomas, A. Leitensdorfer, R. Bratschitsch, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, June 2009

  • InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations
    Wolfgang-Michael Schulz, Robert Rossbach, Matthias Reischle, Gareth J. Beirne, Michael Jetter, Peter Michler
    Phys. Status Solidi C 6, No. 4, 906–909 (2009)
    doi:10.1002/pssc.200880599 (url)

  • Control of single quantum dot emission characteristics and fine structure by lateral electric fields
    S. M. Ulrich, R. Hafenbrak, M. M. Vogel, L. Wang, A. Rastelli, O. G. Schmidt, and P. Michler
    phys. stat. sol. B 246, No. 2, 302–306 (2009) / DOI 10.1002/pssb.200880331
    (Proceedings of NOEKS 9, Klink/Müritz, 26.-29.05.2008) (url)

  • Single entangled photon pair emission from an InGaAs/GaAs quantum dot up to temperatures of 30 K
    R. Hafenbrak, S. M. Ulrich, L. Wang, A. Rastelli, O. G. Schmidt, P. Michler
    Physica status solidi (c) 6, No. 2 389-394 (2009)
    *DOI*10.1002/pssc.200880333 (url)

  • Coherence length of high-beta semiconductor microcavity lasers
    Serkan Ates, Christopher Gies, Sven M. Ulrich, Jan Wiersig, Stephan Reitzenstein, Andreas Loffler, Alfred Forchel, Frank Jahnke, and Peter Michler
    Phys. Status Solidi C 6, No. 2, 568–571 (2009)
    DOI: 10.1002/pssc.200880332 (url)

  • Fabrication and characterization of red AlGaInP-VECSEL
    Thomas Schwarzbäck, Marcus Eichfelder, Robert Roßbach , Michael Jetter, and Peter Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • Electrically pumped single-photon emission of InP quantum dots in a microcavity-LED
    W.-M. Schulz, M. Eichfelder, E. Koroknay, M. Wiesner, M. Reischle, R. Rossbach, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • GaAs-growth on porous silicon
    M. Wiesner, E. A. Angelopoulos, R. Roßbach, M. Jetter and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • Electric field control of vertically coupled InP quantum dots
    E. Koroknay, W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • Ultra low density InAs quantum dots
    D. Richter, R. Roßbach, W.-M. Schulz, R. Hafenbrak, K. Jöns, M. Eichfelder, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • InP/AlGaInP quantum dots for laser operation
    M. Eichfelder, W.-M. Schulz, M. Reischle, M. Wiesner, S. Weidenfeld, R. Roßbach, M. Jetter, and P. Michler
    Proceedings of the 13th European Workshop on Metalorganic Vapor-Phase Epitaxy, Ulm, (2009)

  • Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE
    R. Roßbach, W.-M. Schulz, M. Reischle, G.J. Beirne, C. Hermannstädter, M. Jetter, P. Michler
    doi:10.1016/j.jcrysgro.2008.07.084 (url)

  • Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature
    R. Roßbach, W.-M. Schulz, M. Eichfelder, M. Reischle, G.J. Beirne, M. Jetter, P. Michler
    doi:10.1016/j.jcrysgro.2008.07.036 (url)

  • Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors
    R. Roßbach, W.-M. Schulz, M. Reischle, G.J. Beirne, M. Jetter, P. Michler
    doi:10.1016/j.jcrysgro.2008.07.039 (url)

  • Non-resonant tunneling in single pairs of vertically stacked asymmetric InP/GaInP quantum dots
    M.Reischle, G.J.Beirne, R.Roßbach, M.Jetter , H.Schweizer, P.Michler
    PHYSICA E 40, 1958 (2008) (url)

  • Pulsed layer growth of AlInGaN nanostructures
    M. Jetter, and P. Michler
    phys. stat. sol. (c) 5, No. 6, 1494 (2008) (url)

  • Red and fast - Vertical-emitting semiconductor laser for POF application
    M. Wiesner, M. Eichfelder, R. Roßbach, M. Jetter and P. Michler
    15. ITG-Fachtagung "Kommunikationskabelnetze", Köln (2008)

  • Electrically pumped single-photon emission up to 80 K – Towards a commercial single-photon emitting device
    M. Reischle, G. J. Beirne, W.-M. Schulz, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    American Institute of Physics 2009, CP1199, 29th International Conference on the Physics of Semiconductors, Rio de Janeiro 2008

  • Influence of the Exciton Dark State on the Optical and Quantum Optical Properties of Single Quantum Dots
    M. Reischle, G. J. Beirne, R. Roßbach, M. Jetter, and P. Michler
    American Institute of Physics 2009, CP1199, 29th International Conference on the Physics of Semiconductors, Rio de Janeiro 2008

  • Temperature dependent photoluminescence measurements of single InP quantum dots
    M. Reischle, G. J. Beirne, R. Rossbach, M. Jetter and P. Michler
    In W. Jantsch and F. Schäffler, editors, CP893, Physics of Semiconductors,
    28th International Conference, page 1001. American Institute of Physics, 2007

  • Red to Green Photo­luminescence of InP­Quantum Dots in AlxGa1-xInP
    R. Roßbach, W.­M. Schulz, M. Reischle, G. J. Beir­ne, M. Jetter, and P. Michler
    J. Cryst. Growth, 298, p. 595, 2007

  • Green Photoluminescence of Single InP­Quantum Dots grown on Al0.66Ga0.33InP/AlInP Distributed Bragg Reflectors
    R. Roßbach, W.­M. Schulz, M. Jetter, and P. Mich­ler
    J. Cryst. Growth, 298, p. 599, 2007

  • Vertical asymmetric double Quantum Dots
    R. Roßbach, M. Reischle, G. J. Beirne, H. Schweizer, M. Jetter, and P. Michler
    J. Cryst. Growth, 298, p. 603, 2007

  • InP-quantum dots in AlxGa1-xInP on distributed Bragg reflectors
    W.-M. Schulz, R. Roßbach, M. Jetter, and P. Michler
    Proceedings of the 12th European Workshop on Metalorganic Vapor-Phase Epitaxy, Bratislava, (2007)

  • High-temperature and reliability investigations of 660 nm AlGaInP-VCSEL
    M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    Proceedings of the 12th European Workshop on Metalorganic Vapor-Phase Epitaxy, Bratislava, (2007)

  • Red high-temperature AlGaInP-VCSEL
    R. Roßbach, M. Eichfelder, M. Jetter, H. Schweizer, and P. Michler
    Proceedings of the CLEO®/Europe-IQEC 2007, München, (2007)

  • Tunable lateral tunnel coupling between two self-assembled InGaAs quantum dots
    G.J. Beirne, C. Hermannstädter, L. Wang, A. Rastelli, E. Müller, O.G. Schmidt, and P. Michler
    In K.T. Tsen, J.J. Song, M.J. Cohen, and J.W. Glesener, editors, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV,
    Proc. SPIE, Vol. 6471, 647104 (2007); doi:10.1117/12.697165 (url)

  • Time-resolved optical spectroscopy of tunnel coupled lateral quantum dot molecules
    C. Hermannstädter, G. J. Beirne, L. Wang, A. Rastelli, O. G. Schmidt, and P. Michler
    In W. Jantsch and F. Schäffler, editors, CP893, Physics of Semiconductors, 28th International Conference,
    AIP Conf. Proc., Vol. 893, pp. 875-876, April 10, 2007; doi:10.1063/1.2730170 (url)

  • Structural- and optical characterization of AlyInxGa1-x-yN quantum dots
    V. Pérez-Solórzano, A. Gröning, H.Schweizer, and M. Jetter
    phys. stat. sol. (c), 3, No. 6, S. 2073 (2006)

  • Carrier dynamics in site-controlled Ga1-xInxN quantum dots
    M. Jetter, V. Pérez-Solórzano, A. Gröning, H. Gräbeldingr, M. Ubl, and H. Schweizer
    phys. stat. sol. (c), 3, No. 6, S. 2060 (2006)

  • Investigation on local Ga and In corporation of GaInN quantum wells on facets of selectively grown GaN stripes
    B. Neubert, F. Habel, P. Brückner, F. Scholz, M. Schirra, M. Feneberg, K. Thonke, T. Riemann, J. Christen, M. Beer, J. Zweck, G. Moutchnik, and M. Jetter
    phys. stat. sol. (c) 3, No. 6, S. 1587 (2006).

  • AlyInxGa1-x-yN quantum dot stacks
    M. Jetter, V. Pérez-Solórzano, A. Gröning, H. Schweizer, and P.Michler
    QD 2006, Chamonix, (2006)

  • Characteristics of AlyInxGa1-x-yN quantum dot stacks
    M. Jetter, V. Pérez-Solórzano, A. Gröning, H. Schweizer, and P.Michler
    ICMOVPE XIII, Miyazaki, Japan, (2006)

  • Regions of different dimensionality in selective grown GaInN nanostructures
    M. Jetter, V. Pérez-Solórzano, A. Gröning, H. Schweizer, and P.Michler
    ICMOVPE XIII, Miyazaki, Japan, (2006)

  • Red VCSEL for Last Mile Networks
    M. Eichfelder, R. Rossbach, M. Jetter and P. Michler
    13. ITG-Fachtagung „Kommunikationskabelnetze“, Köln (2006)

  • Red to Green InP­Quantum Dots for VCSEL and Single Photon Emit­ter Applications
    R. Roßbach, M. Eichfelder, W.­M. Schulz, M. Reischle, G. J. Beirne, M. Jetter, and P. Michler
    Semiconductor Nanostructures, Na­nOp ,International Symposium, Berlin, 2006

  • Red VCSEL for Last Mile Networks
    M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
    ITG­Fachbericht 197, Kommunikationskabelnetze, VDE­Verlag, p. 151, 2006

  • Red VCSEL for automotive applications
    R. Roßbach, T. Ballmann, H.Schweizer, and M. Jetter
    SPIE 5663 (2005) 135

  • AlGaInP­based VCSEL
    R. Roßbach, T. Ballmann, H. Schweizer, and M. Jetter
    IPRM 2005, Glasgow, May 2005, IEEE Catalog Number 05CH37633C, p161, 2005

  • Technology Transfer of (Ga)InP­Quantum Dots
    R. Roßbach, and M. Jetter
    IPRM 2005, Glasgow, May 2005, IEEE Catalog Number 05CH37633C, p160, 2005

  • Single-photon and photon pair emission from individual (In,Ga)As quantum dots
    S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Janke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, and Z. Wasilewski
    AIP Conference Proceedings 772, 725 (2005); (ICPS-27, Flagstaff/Arizona, USA). (url)

  • Optical modes of semiconductor micropillars: A theory-experiment comparison
    J. Wiersig, N. Baer, P. Gartner, F. Jahnke, M. Benyoucef, S. M. Ulrich, P. Michler, A. Forchel
    OSA Trends in Optics and Photonics Series 96 A, pp. 659-660 (2004) (url)

  • Red light VCSEL for high temperature applications
    M. Jetter, R. Roßbach, R. Butendeich, F. Scholz, T. Ballmann, and H.Schweizer
    SPIE 5594 (2004) 141

  • Analysis of the modulation behaviour of red VCSELs
    T. Ballmann, R. Roßbach, M. Jetter, M.Jutzi, M.Berroth, and H.Schweizer
    SPIE 5597 (2004) 102

  • Study of as deposited metal contacts for n-SiC
    M. Jetter, A. Ivanov, R. Härle, H. Gräbeldinger and H. Schweizer
    in Phys. Stat. Sol. (c) 1 (10) 2533 (2004)

  • Modulation limit of GaInP­VCSEL
    T. Ballmann, R. Roßbach, B. Raabe, R. Butendeich, F. Scholz, M. Jetter, and H. Schweizer
    Proceedings of the 10th Mi­crooptics Conference, Jena, Germany (2004)

  • Triggered single-photon and photon-pair emission from acceptor bound excitons in a semiconductor
    P. Michler, S. Strauf, M. Klude, D. Hommel, G. Bacher, A. Forchel
    Quantum Electroncis and Laser Science Conference, Baltimore , Maryland , June 1-6 2003, QME4, CD-ROM, www.cleoconference.org (url)

  • Optical studies of Ga x In 1-x P/Ga 0.5 In 0.5 P quantum dots
    G. J. Beirne, M. Jetter, M. Rossi, J. Porsche, F. Scholz, H. Schweizer and T. J. Glynn
    Physica Status Solidi C 0, 1225 (2003) (url)

  • Generation of strongly polarization-correlated photon pairs by cascaded emission from individual CdSe/ZnSe quantum dots
    S. M. Ulrich, S. Strauf, P. Michler, G. Bacher, and A. Forchel
    Phys. Stat. Sol. (b) 238 , No. 3, 607 (2003)
    (Proceedings of NOEKS7, Karlsruhe , 23.-28.02.2003). (url)

  • Time-resolved and single dot spectroscopy of type II InP/GaInP quantum dots
    M. Jetter, M. Rossi, G. J. Beirne, J. Porsche, T. J. Glynn, F. Scholz and H. Schweizer
    Physica Status Solidi C, 0, 1197 (2003) (url)

  • Comparison of the material properties of GaInN structures grown with ammonia and dimethyl-hydrazine as nitrogen precursor
    V. Pérez-Solórzano, B. Santic, A. Gröning, M. Jetter, M. Seip, H. Schweizer and F. Scholz
    Phys. Stat. Sol. (c) 0 (7) 2145 (2003)

  • Red surface emitters: powerful and fast
    H. Schweizer, T. Ballmann, R. Butendeich, R. Roß­bach, B. Raabe, M. Jetter, and F. Scholz
    I­Talk ITComm 2003, Flo­rida, 5248­14, SPIE 5248, p. 103­116

  • Displaced Substitutional Phosphorus Acceptors in Zinc Selenide
    D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, K. Ohkawa, E. Tournie, and J.-P. Faurie
    phys. stat. sol. (b) 229 , 257-260 (2002) (url)

  • Single-photon and photon-pair emission from CdSe/Zn(S,Se) quantum dots
    S. Strauf, S. M. Ulrich, K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel
    2nd International Conference on Semiconductor Quantum Dots, Tokyo, Japan, September 30 – October 3, 2002 . phys. stat. sol. (b) 238 , 321-324 (2003) (url)

  • Triggered single-photon emission of individual acceptor-bound excitons in ZnSe:N
    S. Strauf, P. Michler, T. Passow, D. Hommel, G. Bacher, A. Forchel
    26 th International Conference on the Physics of Semiconductors, 29.07-2.8.2002, Edinburgh, Scottland. Institute of Physics Publishing, CD-ROM (url)

  • Efficient single photon emission of CdSe quantum dots at temperatures up to 200 K
    K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, A. Forchel
    26 th International Conference on the Physics of Semiconductors, 29.07-2.8.2002, Edinburgh, Scottland. Institute of Physics Publishing, CD-ROM (url)

  • Analysis of gain saturation behavior in GaN based quantum well lasers
    M. Vehse, J. Meinertz, O. Lange, P. Michler, J. Gutowski, S. Bader, G. Brüderl, A. Lell, and V. Härle
    International Workshop on Nitride Semiconductors, 22-25 July 2002, Aachen phys. stat. sol (c) 0 , 43-47 (2002) (url)

  • Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures
    M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, and V. Härle
    International Workshop on Nitride Semiconductors, 22-25 July 2002, Aachen phys. stat. sol. (a) 194 , 414-418 (2002). (url)

  • Optical Characterisation of InP/GaInP Quantum Dots
    G. J. Beirne, M. Jetter, M. Rossi, J. Porsche, F. Scholz, H. Schweizer and T. J. Glynn
    SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, Galway , Ireland (2002) (url)

  • Optical Investigations on InP and GaInP Quantum Dots
    M. Jetter, G. Beirne, M. Rossi, J. Porsche, F. Scholz and H. Schweizer
    Proceedings of the 14 th Indium Phosphide and Related Materials Conference,
    Stockholm , Sweden, 569 (2002) (url)

  • Proceedings on the 10 th International Conference on II-VI Compounds
    J. Gutowski, H. Heinke, D. Hommel, P. Michler
    Bremen(Germany) , Sept 9-14 ,2001 physica status solidi (b), January 2002

  • The Growth of Self-Assembled GaInN Quantum Dots by MOVPE
    V. Perez-Solorzano, Y. Kobayashi, M. Jetter, H. Schweizer, F. Scholz, E. Hahn, and D. Gerthsen
    Proceedings of the 11th International Conference on Metal Organic Vapour Phase Epitaxy, Berlin, Germany (2002)

  • Interplay of the trion singlet and triplet state transition in magnetooptical and time-resolved investigation of ZnSe/Zn(S,Se) single quantum wells
    J. Gutowski, K. Sebald, C. Roder, P. Michler, M. Klude, H. Wenisch, and D. Hommel
    10 th International Conference on II-VI Compounds, Bremen , Germany , September 9-14, 2001. phys. stat. sol. (b) 229 , 653-657 (2002) (url)

  • Negatively charged donor centers in ultrathin ZnSe:N layers
    S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson, and J.J. Davies
    10 th International Conference on II-VI Compounds, Bremen , Germany , September 9-14, 2001. phys. stat. sol. (b) 229 , 245-250 (2002) (url)

  • Nonclassical radiation from a single quantum dot
    P. Michler, A. Imamoglu, A. Kiraz, C. Becher, M. D. Mason, P. J. Carson, G. F. Strouse, S. K. Buratto, W. V. Schoenfeld, and P. M. Petroff
    10 th International Conference on II-VI Compounds, Bremen , Germany , September 9-14, 2001. phys. stat. sol. (b) 229 , 399-405 (2002) (url)

  • Optical gain of CdSe quantum dot stacks
    K. Sebald, P. Michler, J. Gutowski, R. Kröger, T. Passow, M. Klude, and D. Hommel
    7 th International Conference on Optics and Excitons in Confined Systems, Montpellier, France , September 3-9 (2001).
    phys. stat. sol. (a) 190 , 593-597 (2002) (url)

  • A Quantum Dot Single Photon Source
    C. Becher, A. Kiraz, P. Michler, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, E. Hu, and A. Imamoglu
    10 th International Conference on Modulated Semiconductor Structures, Linz , Austria, July 23-27, 2001 . Physica E 13 , 412-417 (2002) (url)

  • Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures
    M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle
    Forth International Conference on Nitride Semiconductors, Denver , Colorado USA , July 16-20, 2001. phys. stat. sol. (b), 188 , No.1, 109-112 (2001) (url)

  • Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures
    M. Röwe, P. Michler, J. Gutowski, S. Bader, B. Hahn, V. Kümmler, A. Weimar, A. Lell, and V. Härle
    Forth International Conference on Nitride Semiconductors, Denver , Colorado USA , July 16-20, 2001. phys. stat. sol. (a), 188 , No.1, 65-68 (2001) (url)

  • Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN:Mg
    S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt, and D. Hommel
    Forth International Conference on Nitride Semiconductors, Denver , Colorado USA , July 16-20, 2001. phys. stat. sol. (b) 228 , No.2, 379-383 (2001) (url)

  • A Quantum Dot Single Photon Source
    P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, E. Hu, and A. Imamoglu
    Hauptvortrag bei der Frühjahrstagung der DPG, Halbleiterphysik, Hamburg 26.03.2001 Advances in Solid State Physics, Springer (url)

  • Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg
    S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. Hommel
    Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp. 721-724 (2000) (url)

  • Fine structure of the amplified spontaneous emission of ZnSe laser structures
    R. Heinecke, U. Neukirch, P. Michler, and J. Gutowski
    25nd International Conference on the Physics of Semiconductors, Osaka , ( Japan ), September 17-22, (2000).
    Proceedings of the 25 th International Conference on the Physics of Semicondutors, Springer, Eds N. Miura, T. Ando,p 585-586, (2000). (url)

  • Magnetooptics of trions in ZnSe/(Zn,Mg)(S,Se) single quantum wells
    K. Sebald, O. Homburg, P. Michler, J. Gutowski, M. Klude, H. Wenisch, and D. Hommel
    25nd International Conference on the Physics of Semiconductors, Osaka , ( Japan ), September 17-22, (2000).
    Proceedings of the 25 th International Conference on the Physics of Semicondutors, Springer, Eds N. Miura, T. Ando,p 1523-1524, (2000). (url)

  • Photon antibunching from a single semiconductor quantum dot at room temperature
    P. Michler, A. Imamoglu, M. D. Mason, P. J. Carson, G. F. Strouse and S. K. Buratto
    25nd International Conference on the Physics of Semiconductors, Osaka , ( Japan ), September 17-22, (2000).
    Proceedings of the 25 th International Conference on the Physics of Semicondutors, Springer, Eds N. Miura, T. Ando, p 1173-1174, (2000). (url)

  • Optically pumped quantum dot lasers using high-Q microdisk cavities
    P. Michler, A. Kiraz, Lidong Zhang, C. Becher, E. Hu, W. V. Schoenfeld, P. M. Petroff and A. Imamoglu
    25nd International Conference on the Physics of Semiconductors, Osaka , ( Japan ), September 17-22, (2000).
    Proceedings of the 25 th International Conference on the Physics of Semicondutors, Springer, Eds N. Miura, T. Ando, p 655-656 (2000). (url)

  • Quantum dot lasers using high-Q microdisk cavities
    P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu
    International Conference on Semiconductor Quantum Dots, July 31 - August 3, 2000 , Munich , Germany . phys. stat. sol. (b) 224 , 797-801 (2001) (url)

  • Photon antibunching from a single semiconductor quantum dot at room temperature
    P. Michler, A. Imamoglu, M. D. Mason, P. J. Carson, G. F. Strouse and S. K. Buratto
    International Conference on Semiconductor Quantum Dots, July 31 - August 3, 2000 , Munich, Germany (url)

  • Gain saturation in (In,Ga)N/GaN/( Al , Ga )N laser structures
    P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, H.-J. Lugauer and V. Härle
    3 nd International Symposium on Blue Laser and Light Emitting Diodes, Zeuthen/Berlin, Germany, 6-10 March 2000. phys. stat. sol. (a) 180 , 391 (2000). (url)

  • Atomic force microscopy of quantum dot structures
    C. M. Grogan, G. J. Beirne, T. J. Glynn and G. M. O'Connor
    Proceedings of the Royal Microscopical Society, 35, 19, (2000) (url)

  • Optical monitoring of laser generated plasma during laser welding
    J. O. Connolly, G. J. Beirne, G. M. O'Connor, T. J. Glynn and A. J. Conneely
    Proceedings of SPIE Photonics West Conference, San Jose , California , USA (2000) (url)

  • Shallow donors in ultrathin nitrogen doped ZnSe layers - a novel or a disregarded compensation mechanism inII-VI device structures?
    S. Strauf, P. Michler, J. Gutowski, M. Klude, and D. Hommel
    9th International Conference on II-VI Compounds, November 1-5, Kyoto , Japan 1999, to Journal of Cryst. Growth. 214/215 , 497-501 (2000) (url)

  • The trion spin-singlet and -triplet states in ZnSe single quantum wells
    O. Homburg, P. Michler, K. Sebald, J. Gutowski, H. Wenisch, and D. Hommel
    9th International Conference on II-VI Compounds, November 1-5, Kyoto , Japan 1999 Journal of Cryst. Growth. 214/215 , 832-836 (2000) (url)

  • Influence of barrier doping and barrier composition on optical gain in (In,Ga)N MQWs
    M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, P. Ryder, S. Keller and S. P. DenBaars
    Third International Conference on Nitride Semiconductors (ICNS3), Montpellier , France, 1999 phys. stat. sol. (b) 216 , 331 (1999). (url)

  • Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaN grown by MBE
    S. Strauf, P. Michler, J. Gutowski, U. Birkle, M. Fehrer, S. Einfeld, and D. Hommel
    Third International Conference on Nitride Semiconductors (ICNS3), Montpellier , France, 1999phys. stat. sol. (b) 216 , 557 (1999) (url)

  • Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers
    P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel
    Proceedings SPIE 3625, Physics and Simulation of Optoelectronic Devices, 1999 (url)

  • Studies on Carbon as alternative p-type dopant for GaN
    U. Birkle, M. Fehrer, S. Strauf, S. Einfeldt, D. Hommel, P. Michler, and J. Gutowski
    MRS Internet J. Nitride Semicond. Res. 4S1. G5.6 (1999) (url)

  • Temperature dependent gain characteristics of ZnSe based separate-confinement heterostructure lasers with binary wells
    P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel
    Proceedings of the 2 nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, Eds. A. Yoshikawa et al., Ohmsha Ldt. (Tokyo) p. 528-31, 1998 (url)

  • Temperature dependent gain characteristics of ZnSe based separate-confinement heterostructure lasers with binary wells
    P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel
    Proceedings of the 2 nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, Eds. A. Yoshikawa et al., Ohmsha Ldt. (Tokyo) p. 528-31, 1998 (url)

  • Donor-acceptor-pair recombination for impurity identification and analysis of cubic inclusions in Mg- and C-doped MBE grown hexagonal GaN
    S. Strauf, P. Michler, J. Gutowski, U. Birkle, S. Einfeldt, V. Kirchner, H. Heinke, and D. Hommel
    Proceedings of the 2 nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, Eds.A. Yoshikawa et al., Ohmsha Ldt. (Tokyo), p. 574 - 77, 1998 (url)

  • Electro-optical properties of II-VI heterostructures in the blue-green spectral region
    T. Lilienkamp, P. Michler, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. Hommel
    European Conference on Lasers and Electro-Optics/European Quantum Electronics Conference, 13-18 September 1998, Glasgow , Scottland (url)

  • Gain mechanisms in ZnSe based separate-confinement-heterostructure lasers with binary wells
    O. Homburg, P. Michler, H. Wenisch, M. Behringer, J. Gutowski, and D. Hommel
    24nd International Conference on the Physics of Semiconductors, Jerusalem ( Israel ), August 2-7, (1998) to be published (url)

  • Excitonic Transitions in MBE Grown h-GaN with Cubic Inclusions
    S. Strauf, P. Michler, J. Gutowski, H. Selke, U. Birkle, S. Einfeldt, and D. Hommel
    Journal of Cryst. Growth 189/190, 682-686 (1998) (url)

  • Dynamics of gain and stimulated emission in II-VI laser diodes
    P. Michler, U. Neukirch, K. Wundke, J. Gutowski, M. Behringer, D. Hommel, H. Güldner, and K.Henneberger
    Fifth International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Graal-Müritz, Germany, September 1-5,1997, phys. stat. sol. (b), 206 p 399 - 406 (1998) (url)

  • Excitonic optical nonlinearities and dynamics in II-VI heterostructures and laser diodes
    J. Gutowski, U. Neukirch, P. Michler, and B. Haase
    8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France, Journal of Crystal Growth 184/185 , 662-671 (1998) (url)

  • Optical gain characteristics and excitonic nonlinearities in II-VI laser diodes
    P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel, M. F. Pereira Jr. and K. Henneberger
    8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble , France Journal of Crystal Growth 184/185 , 575-579 (1998) (url)

  • Spectro-temporal gain dynamics of optically pumped II-VI multiple quantum well structures
    K. Wundke, U. Neukirch, P. Michler, J. Gutowski, M. Behringer, and D. Hommel
    8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France, Journal of Crystal Growth 184/185 , 637-640 (1998) (url)

  • Electroaborption in low-dimensional and bulk-like Zn x Cd 1-x Se
    W. Ebeling, M. Behringer, M. Fehrer, P. Michler, J. Gutowski, D. Hommel, D. Merbach, and E. Schöll
    8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France, Journal of Crystal Growth 184/185 , 706-709 (1998) (url)

  • Dynamics of dual-wavelength emission from a coupled semiconductor microcavity laser
    P. Michler, M. Hilpert, and G. Reiner
    Quantum Electroncis and Laser Science Conference , Vol 12, 1997 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1997), p. 14 - 15 (url)

  • Dynamical properties of optical excitations in II-VI Structures
    J. Gutowski, G. Bley, P. Michler, U. Neukirch, and K. Wundke
    Japanese-German Seminar on II-VI Semiconductors, Bremen , March 23 - 27, (1997), physica status solidi b 202 , 873 - 89 (1997) (url)

  • Ultrashort dynamic response of In 0.2 Ga 0.8 As/GaAs microcavity lasers
    P. Michler, M. Hilpert, W. W. Rühle, H. C. Schneider, F. Jahnke, S. W. Koch, H. D.Wolf, D. Bernklau, and H. Riechert
    World Scientific ( Singapore ), 23nd International Conference on the Physics of Semiconductors, Berlin ( Germany ), July 21 - 26, (1996), p 3095 - 98 (url)

  • Bleaching of excitons in II-VI laser diodes under lasing conditions
    P. Michler, A. Dießel, W. Ebeling, J. Gutowski, B. Jobst, D. Hommel, K. Schüll, J. Nürnberger, G. Landwehr, M. F.Pereira Jr., and K. Henneberger
    Ohmsha, Ldt. (Tokyo), ed. A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda, Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Univ., Japan, 1996, Eds. A. Yoshikawa et al., Ohnsha Ltd. (Tokyo) 1996, p 147 - 150. (url)

  • Dynamics of the stimulated emission in In 0.76 Ga 0.24 As 0.83 P 0.17 /InP microcavity lasers
    M. Hilpert, P. Michler, W. W. Rühle, K. Streubel, and J. Andre
    Int. Workshop on Femtosecond Technology FST'96, Febr. 21-22, Tsukuba, Japan 1996 p 114 (url)

  • Transient pulse response of In 0.2 Ga 0.8 As/GaAs microcavity lasers
    P. Michler, G. Reiner, and W. W. Rühle
    Proceedings of the Conference on Hot Carriers in Semiconductors IX, Chicago, Illinois, USA (Plenum Publishing Corporation, New York) July 31 - August 4, (1995) (url)

  • Transient pulse response of In 0.2 Ga 0.8 As/GaAs microcavity lasers
    P. Michler, A. Lohner, W. W. Rühle and G. Reiner
    Quantum Electroncis and Laser Science Conference, Vol. 16, 1995 OSA Technical Digest Series (Optical Society of America , Washington , D. C.), (1995), p 149 (url)

  • Excitonic spin-flip dynamics under resonant two-photon excitation in quantum wells
    A. Lohner, P. Michler, W. W. Rühle, and K. Köhler
    Quantum Optoelectronics Conference, Dana Point , California , USA , March 15 -17, (1995) (url)

  • Interface characteristics of GaInP/GaAs double heterostructuers grown by metalorganic vapor phase epitaxy
    C. Y. Tsai, M. Moser, C. Geng, V. Härle, T. Forner, P. Michler, A. Hangleiter, and F. Scholz
    J. Crystal Growth 145 , 786 - 91 (1994) (url)

  • Nonradiative and radiative recombination of electrons and holes in quantum wells
    A. Hangleiter, P. Michler, T. Forner, A. Moritz, G. Fuchs, V. Härle, M. Moser, K. Zieger, and F. Scholz
    World Scientific ( Singapore ), 22nd International Conference on the Physics of Semiconductors, Vancouver ( Canada ), August 14 - 19, (1994), p 827 (url)

  • Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures
    V. Härle, H. Bolay, E. Lux, F. Scholz, P. Michler, A. Moritz, T. Forner, and A. Hangleiter
    Proceedings of Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara , California , USA , (1994), p 6 - 9 (url)

  • Indirect excitons in strained Ga x In 1-x As/InP quantum wells
    P. Michler, A. Hangleiter, A. Moritz, G. Fuchs, V. Härle, and F. Scholz
    Third International Conference on Optics of Excitons in Confined Systems, Montpellier , France. Journal de Physique IV Colloque C5 Suppl. JP II, 3 , 269 - 72 (1993) (url)

  • Optical investigations on strained Ga x In 1-x P quantum wells
    C. Geng, M. Moser, F. Scholz, P. Cygan, P. Michler, and A. Hangleiter
    Proceedings of the 20th Internatioal Symposium on Gallium Arsenide and Related Compounds, Freiburg, (Germany), Aug. 29 - Sept. 2, (1993), p 409 - 14 (url)