Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots

21. Januar 2013 / Fr. M. Jetter

Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots

[Bild: IHFG]

We report about the mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. We found a good agreement between a simple analytical modeling of the mode structure and measurements, which allows to adjust the design of future devices. The quality factors show an analogous behavior as etched micropillars. The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes.

Publication: Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots
S. Weidenfeld,W.-M. Schulz, C. A. Kessler, M. Reischle, M. Eichfelder, M. Wiesner, M. Jetter, and P. Michler
externer Link Applied Physics Letters 102, 011132 (2013)


Contact person: Dr. M. Jetter

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