The heteroepitaxy of III–V semiconductors on silicon is a promising approach for making silicon a photonic platform. Mismatches in material properties, however, present a major challenge, leading to high defect densities in the epitaxial layers and adversely affecting radiative recombination processes. However, nanostructures, such as quantum dots, have been found to grow defect-free even in a suboptimal environment. Here we present the first realization of indium phosphide quantum dots on exactly oriented Si(001), grown by metal–o rganic vapour-phase epitaxy. We report electrically driven single-photon emission in the red spectral region, meeting the wavelength range of silicon avalanche photodiodes’ highest detection efficiency.
Publication: Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001)
M. Wiesner, W-M. Schulz, C. Kessler, M. Reischle, S. Metzner, F. Bertram, J. Christen, R. Roßbach, M. Jetter and P. Michler
Nanotechnology 23, 335201 (2012)
Contact person: Dr. M. Jetter