Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

20. Januar 2013 / Fr. M. Jetter

Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

[Bild: IHFG]

We present a strain-compensation design for non-resonantly pumped vertical external cavity surface-emitting lasers for emission in the red spectral range around 665 nm. Here, the VECSEL chip is based on a metal-organic vapor- phase epitaxy grown (Ga x In 1−x ) 0.5 P 0.5 /[(Al x Ga 1-x ) y In 1−y ] 0.5 P 0.5 multi-quantum- well structure with 20 compressively-strained quantum wells. By introducing tensile strained quaternary barriers and cladding layers in a 5 × 4 QW design, we could compensate for the compressive strain introduced by the quan- tum wells. Photoluminenscence measurements of structures with different numbers of quantum well packages reveal a more homogenous quantum well growth due to the strain-compensation technique. Furthermore, with the strain compensation technique, the output power could be increased over 30 % compared to our conventional structures. Publication: Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs T. Schwarzbäck, H. Kahle, M. Jetter, and P. Michler externer Link Journal of Crystal Growth 370, 208 (2013), DOI: 10.1016/j.jcrysgro.2012.09.051


Contact person: Dr. M. Jetter

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