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Vijayan, Ponraj

Ponraj Vijayan

Herr MSc.

PhD-Student
Institut für Halbleiteroptik und Funktionelle Grenzflächen
Semiconductor Epitaxy Group

Kontakt

+49 711 685 65191
E-Mail

Allmandring 3
70569 Stuttgart
Deutschland
Raum: 1.011

Publikationen

2025
1. Pfister, U., Wendland, D., Hornung, F., Engel, L., Hüging, H., Herzog, E., Vijayan, P., Joos, R., Jung, E., Jetter, M., Portalupi, S. L., Pernice, W. H. P., & Michler, P. (2025). Telecom wavelength quantum dots interfaced with silicon-nitride circuits via photonic wire bonding. Npj Nanophotonics, 2, Article 1. https://doi.org/10.1038/s44310-025-00061-w
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  @article{Pfister2025, abstract = {Photonic integrated circuits find applications in classical and quantum communication, computing and sensing. For ideal performance, efforts are made to effectively combine different platforms to benefit from their respective strengths. Here, direct laser written photonic wire bonds are employed to interface triggered sources of quantum light, based on semiconductor quantum dots embedded into etched microlenses, with low-loss silicon-nitride photonics. Single photons at telecom wavelengths are generated by In(Ga)As quantum dots which are then funneled into a silicon-nitride chip containing single-mode waveguides and beamsplitters. The second-order correlation function of g(2)(0) = 0.11 {\textpm} 0.02, measured via the on-chip beamsplitter, clearly demonstrates the transfer of single photons into the silicon-nitride platform. The photonic wire bonds funnel on average 27.9 {\textpm} 8.0{\%} of the bare microlens emission (NA = 0.6) into the silicon-nitride-based photonic integrated circuit even at cryogenic temperatures. This opens the route for the effective future up-scaling of circuitry complexity based on the use of multiple different platforms.}, author = {Pfister, Ulrich and Wendland, Daniel and Hornung, Florian and Engel, Lena and H{\"u}ging, Hendrik and Herzog, Elias and Vijayan, Ponraj and Joos, Raphael and Jung, Erik and Jetter, Michael and Portalupi, Simone L. and Pernice, Wolfram H. P. and Michler, Peter}, day = 17, doi = {10.1038/s44310-025-00061-w}, issn = {2948-216X}, journal = {npj Nanophotonics}, month = {03}, number = 1, pages = 11, title = {Telecom wavelength quantum dots interfaced with silicon-nitride circuits via photonic wire bonding}, url = {https://doi.org/10.1038/s44310-025-00061-w}, volume = 2, year = 2025 }
  Link
  https://doi.org/10.1038/s44310-025-00061-w
2024
1. Vijayan, P., Joos, R., Werner, M., Hirlinger-Alexander, J., Seibold, M., Vollmer, S., Sittig, R., Bauer, S., Braun, F., Portalupi, S., Jetter, M., & Michler, P. (2024). Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics. Materials for Quantum Technology, 4. https://doi.org/10.1088/2633-4356/ad2522
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  @article{article, author = {Vijayan, Ponraj and Joos, Raphael and Werner, Marco and Hirlinger-Alexander, Jakob and Seibold, Matthias and Vollmer, Sergej and Sittig, Robert and Bauer, Stephanie and Braun, Fiona and Portalupi, Simone and Jetter, Michael and Michler, Peter}, doi = {10.1088/2633-4356/ad2522}, journal = {Materials for Quantum Technology}, month = {02}, title = {Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics}, volume = 4, year = 2024 }
2. Hornung, F., Pfister, U., Bauer, S., Cyrlyson’s, D. R., Wang, D., Vijayan, P., Garcia Jr., A. J., Covre da Silva, S. F., Jetter, M., Portalupi, S. L., Rastelli, A., & Michler, P. (2024). Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides and Beamsplitters. Nano Lett., 24, Article 4. https://doi.org/10.1021/acs.nanolett.3c04010
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  @article{hornungihfghighly, author = {Hornung, Florian and Pfister, Ulrich and Bauer, Stephanie and Cyrlyson’s, Dee Rocking and Wang, Dongze and Vijayan, Ponraj and Garcia Jr., Ailton J. and Covre da Silva, Saimon Filipe and Jetter, Michael and Portalupi, Simone L. and Rastelli, Armando and Michler, Peter}, doi = {10.1021/acs.nanolett.3c04010}, journal = {Nano Lett.}, language = {engl}, month = {01}, number = 4, pages = {1184–1190}, title = {Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides and Beamsplitters}, url = {https://pubs.acs.org/doi/full/10.1021/acs.nanolett.3c04010}, volume = 24, year = 2024 }
  Link
  https://pubs.acs.org/doi/full/10.1021/acs.nanolett.3c04010
3. Joos, R., Bauer, S., Rupp, C., Kolatschek, S., Fischer, W., Nawrath, C., Vijayan, P., Sittig, R., Jetter, M., Portalupi, S. L., & Michler, P. (2024). Coherently and Incoherently Pumped Telecom C-Band Single-Photon Source with High Brightness and Indistinguishability. Nano Letters, 24, 28. https://pubs.acs.org/doi/full/10.1021/acs.nanolett.4c01813
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  @article{joos2024coherently, author = {Joos, Raphael and Bauer, Stephanie and Rupp, Christian and Kolatschek, Sascha and Fischer, Wolfgang and Nawrath, Cornelius and Vijayan, Ponraj and Sittig, Robert and Jetter, Michael and Portalupi, Simone L. and Michler, Peter}, journal = {Nano Letters}, month = {07}, pages = 28, title = {Coherently and Incoherently Pumped Telecom C-Band Single-Photon Source with High Brightness and Indistinguishability}, url = {https://pubs.acs.org/doi/full/10.1021/acs.nanolett.4c01813}, volume = 24, year = 2024 }
  Link
  https://pubs.acs.org/doi/full/10.1021/acs.nanolett.4c01813
2023
1. Nawrath, C., Joos, R., Kolatschek, S., Bauer, S., Pruy, P., Hornung, F., Fischer, J., Huang, J., Vijayan, P., Sittig, R., Jetter, M., Portalupi, S. L., & Michler, P. (2023). Bright Source of Purcell-Enhanced, Triggered, Single Photons in the Telecom C-Band. Advanced Quantum Technologies. https://doi.org/10.1002/qute.202300111
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  @article{nawrath2023bright, abstract = {Several emission features mark semiconductor quantum dots as promisingnon-classical light sources for prospective quantum implementations. Forlong-distance transmission and Si-based on-chip processing, the possibility tomatch the telecom C-band is decisive, while source brightness and highsingle-photon purity are key features in virtually any quantumimplementation. An InAs/InGaAs/GaAs quantum dot emitting in the telecomC-band coupled to a circular Bragg grating is presented here. This cavitystructure stands out due to its high broadband collection efficiency and highattainable Purcell factors. Here, simultaneously high brightness with afiber-coupled single-photon count rate of 13.9 MHz for an excitationrepetition rate of 228 MHz (first-lens single-photon collection efficiency≈17%for NA=0.6), while maintaining a low multi-photon contribution ofg(2)(0)=0.0052 is demonstrated. Moreover, the compatibility withtemperatures of up to 40 K attainable with compact cryo coolers, furtherunderlines the suitability for out-of-the-lab implementations}, author = {Nawrath, Cornelius and Joos, Raphael and Kolatschek, Sascha and Bauer, Stephanie and Pruy, Pascal and Hornung, Florian and Fischer, Julius and Huang, Jiasheng and Vijayan, Ponraj and Sittig, Robert and Jetter, Michael and Portalupi, Simone Luca and Michler, Peter}, issn = {2511-9044}, journal = {Advanced Quantum Technologies}, month = {08}, title = {Bright Source of Purcell-Enhanced, Triggered, Single Photons in the Telecom C-Band}, url = {https://doi.org/10.1002/qute.202300111}, year = 2023 }
  Link
  https://doi.org/10.1002/qute.202300111
2022
1. Sittig, R., Nawrath, C., Kolatschek, S., Bauer, S., Schaber, R., Huang, J., Vijayan, P., Pruy, P., Portalupi, S. L., Jetter, M., & Michler, P. (2022). Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform. Nanophotonics. https://doi.org/doi:10.1515/nanoph-2021-0552
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  @article{doi:10.1515/nanoph-2021-0552, abstract = {The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal–organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies.}, author = {Sittig, Robert and Nawrath, Cornelius and Kolatschek, Sascha and Bauer, Stephanie and Schaber, Richard and Huang, Jiasheng and Vijayan, Ponraj and Pruy, Pascal and Portalupi, Simone Luca and Jetter, Michael and Michler, Peter}, doi = {doi:10.1515/nanoph-2021-0552}, journal = {Nanophotonics}, title = {Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform}, url = {https://www.degruyter.com/document/doi/10.1515/nanoph-2021-0552/html}, year = 2022 }
  Link
  https://www.degruyter.com/document/doi/10.1515/nanoph-2021-0552/html

Ponraj Vijayan

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2025

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2024

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2023

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2022

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Ponraj Vijayan

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2025

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2024

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2023

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2022

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