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Zimmer, Michael

Michael Zimmer

MSc.

PhD-Student
Institut für Halbleiteroptik und Funktionelle Grenzflächen
Semiconductor Epitaxy Group

Kontakt

+49 711 685 63886
E-Mail

Allmandring 3
70569 Stuttgart
Deutschland
Raum: 1.007

Publikationen

2023
1. Zimmer, M., Trachtmann, A., Jetter, M., & Michler, P. (2023). MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources. Journal of Crystal Growth, 605, 127081. https://doi.org/10.1016/j.jcrysgro.2023.127081
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  @article{ZIMMER2023127081, abstract = {InGaAs quantum dots (QDs) with low areal density suitable for single-photon applications are fabricated on a GaAs substrate by MOVPE. AFM measurements used to investigate the dependency of QD density and size on the V/III ratio during growth reveal a low QD density of 3.2⋅107cm−2 for a high V/III ratio of 360. To allow for a targeted electrical excitation, the InGaAs QDs are embedded into a pin-LED structure containing an oxide aperture. Low temperature electroluminescence measurements show emission of a QD line at a wavelength of 1272.4 nm. Direct comparison of photoluminescence and electroluminescence spectra approve the electrical excitation of a single QD.}, author = {Zimmer, M. and Trachtmann, A. and Jetter, M. and Michler, P.}, doi = {https://doi.org/10.1016/j.jcrysgro.2023.127081}, issn = {0022-0248}, journal = {Journal of Crystal Growth}, pages = 127081, title = {MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources}, url = {https://www.sciencedirect.com/science/article/pii/S0022024823000076}, volume = 605, year = 2023 }
  Link
  https://www.sciencedirect.com/science/article/pii/S0022024823000076
2022
1. Ricciardi, A., Zimmer, M., Witz, N., Micco, A., Piccirillo, F., Giaquinto, M., Kaschel, M., Burghartz, J., Jetter, M., Michler, P., Cusano, A., & Portalupi, S. L. (2022). Integrated Optoelectronic Devices Using Lab-On-Fiber Technology. Advanced Materials Technologies, n/a(n/a), Article n/a. https://doi.org/10.1002/admt.202101681
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  @article{https://doi.org/10.1002/admt.202101681, abstract = {Abstract Silica fibers are nowadays cornerstones in several technological implementations from long-distance communication, to sensing applications in many scenarios. To further enlarge the functionalities, the compactness, and the performances of fiber-based devices, one needs to reliably integrate small-footprint components such as sensors, light sources, and detectors onto single optical fiber substrates. Here, a novel proof of concept is presented to deterministically integrate optoelectronic chips onto the facet of an optical fiber, further implementing the electrical contacting between the chip and fiber itself. The CMOS-compatible procedure is based on a suitable combination of metal deposition, laser machining, and micromanipulation, directly applied onto the fiber tip. The proposed method is validated by transferring, aligning, and bonding a quantum-well based laser on the core of a multimode optical fiber. The successful monolithic device integration on fiber shows simultaneously electrical contacting between the laser and the ferrule, and 20\% light in-coupling in the fiber. These results pave new ways to develop the next generation of optoelectronic systems on fiber. The technological approach will set a new relevant milestone along the lab-on-fiber roadmap, opening new avenues for a novel class of integrated optoelectronic fiber platforms, featuring unrivaled miniaturization, compactness, and performances levels, designed for specific applications.}, author = {Ricciardi, Armando and Zimmer, Michael and Witz, Norbert and Micco, Alberto and Piccirillo, Federica and Giaquinto, Martino and Kaschel, Mathias and Burghartz, Joachim and Jetter, Michael and Michler, Peter and Cusano, Andrea and Portalupi, Simone Luca}, doi = {https://doi.org/10.1002/admt.202101681}, eprint = {https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202101681}, journal = {Advanced Materials Technologies}, number = {n/a}, pages = 2101681, title = {Integrated Optoelectronic Devices Using Lab-On-Fiber Technology}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/admt.202101681}, volume = {n/a}, year = 2022 }
  Link
  https://onlinelibrary.wiley.com/doi/abs/10.1002/admt.202101681
2020
1. Huang, Z., Zimmer, M., Jetter, M., & Michler, P. (2020). Gaussian-like transverse-mode profile characteristics of high-power large-area red-emitting VCSELs. Opt. Lett., 45(6), Article 6. https://doi.org/10.1364/OL.386525
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  @article{Huang:20, abstract = {We demonstrate a large-area red-emitting vertical-cavity surface-emitting laser (VCSEL) structure with significant improvement in the uniformity of charge carrier distribution by adopting a Si-doped \$ \{\{\{\textblackslash\}rm Al\}_\{0.20\}\}\{\{\textblackslash\}rm GaInP\} \$Al0.20GaInP current spreading layer and a bottom disk contact. The new structure emitting at 670 nm with a bottom disk contact diameter of 20 {\textmu}m was compared with the conventional oxide-confined top-emitting structure with a similar aperture size. The maximum output peak power increased from 8.8 mW to 22.5 mW under pulsed-mode operation at room temperature. The far field improved from a strong multiple-mode pattern to a Gaussian-like profile. The corresponding divergence angle of the far-field pattern at \$ 2\{\{\textblackslash\}rm \{I\}\}_\{\{\textblackslash\}rm\{th\}\} \$2Ith {\textless}sup/{\textgreater} injection current reduced from 16.2{\textdegree} to 10.9{\textdegree}.}, author = {Huang, Zhihua and Zimmer, Michael and Jetter, Michael and Michler, Peter}, doi = {10.1364/OL.386525}, journal = {Opt. Lett.}, month = {03}, number = 6, pages = {1419--1422}, publisher = {OSA}, title = {Gaussian-like transverse-mode profile characteristics of high-power large-area red-emitting VCSELs}, url = {http://ol.osa.org/abstract.cfm?URI=ol-45-6-1419}, volume = 45, year = 2020 }
  Link
  http://ol.osa.org/abstract.cfm?URI=ol-45-6-1419
2019
1. Huang, Z., Zimmer, M., Hepp, S., Jetter, M., & Michler, P. (2019). Optical Gain and Lasing Properties of InP/AlGaInP Quantum-Dot Laser Diode Emitting at 660 nm. IEEE. https://doi.org/10.1109/JQE.2019.2896643
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  @article{noauthororeditor, abstract = {We investigated the optical gain properties and lasing characteristics of a pulsed electrically pumped laser structure, which consists of a single layer of self-assembled InP quantum dots (QDs) assembled in (Al 0.10 Ga 0.90 ) 0.52 In 0.48 P barriers. The optical gain and absorption spectra were obtained by analyzing the amplified spontaneous emission as a function of the excitation length. At a current density of 1.2 kA/cm 2 , an internal optical loss value of 5 ± 2 cm −1 and a peak modal gain of 39.3 cm −1 corresponding to a material gain of approximately 2675 cm −1 per QD layer were determined at room temperature. For a 2.24-mm-long laser with uncoated facets emitting at 660 nm, a low threshold current density of 281 A/cm 2 and an external differential quantum efficiency of 34.2% were determined. The internal quantum efficiency of 66% and the transparent current density of 65.8 A/cm 2 for a single layer of QDs were also demonstrated.}, author = {Huang, Zhihua and Zimmer, Michael and Hepp, Stefan and Jetter, Michael and Michler, Peter}, doi = {10.1109/JQE.2019.2896643}, journal = { IEEE }, title = {Optical Gain and Lasing Properties of InP/AlGaInP Quantum-Dot Laser Diode Emitting at 660 nm}, url = {https://ieeexplore.ieee.org/document/8631194}, year = 2019 }
  Link
  https://ieeexplore.ieee.org/document/8631194

Michael Zimmer

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2023

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2022

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2020

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2019

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Michael Zimmer

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Publikationen

2023

BibTeX

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2022

BibTeX

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2020

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2019

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