Direkt zu

 

DFG Forschergruppe FOR 957

polarcon

 

Polarization field control in nitride light emitters - PolarCoN

876c5bc3075904729010

 


 Project partners 

Project P1: Prof. Dr. Ferdinand Scholz (Speaker)
Institut für Optoelektronik, Universität Ulm
Growth of non- and semi-polar GaN quasi substrates by hydride vapor phase epitaxy
Project P2: Prof. Dr. Andreas Hangleiter
Institut für Angewandte Physik, Technische Universität Braunschweig
Physics and Technology of nitride-based non-polar green laser diode structures
Project P3: Dr. Michael Jetter and Prof. Dr. Peter Michler
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart
High In-containing GaInN active region: Growth on semi-polar microstructures and time-resolved optical characterization
Project P4: PD Dr. Armin Dadgar and Prof. Dr. Alois Krost
FNW/IEP/AHE, Otto-von-Guericke Universität Magdeburg
Polarization reduced AllnGaN / AllnN MQWs and polarization reduced layers on planar silicon
Project P5: Prof. Dr. Michael Kneissl and Dr. Tim Wernicke
Institut für Festkörperphysik, Technische Universität Berlin
Polarization field control in GaInN quantum well heterostructures on semipolar growth surfaces
Project P6: Prof. Dr. Josef Zweck
Fakultät für Physik, Universität Regensburg
Transmission electron microscopy studies of semi- and non-polar nitrides: surfaces, interfaces and defects
Project P7: Dr. Frank Bertram and Prof. Dr. Jürgen Christen
FNW/IEP/AFP, Otto-von-Guericke Universität Magdeburg
Microscopic Correlation of electronic and Optical Properties with the Crystalline Real Structure of Polarization Field Controlled Group-III-Nitrides
Project P8: Prof. Dr. Bernd Witzigmann
Universität Kassel
Non-Equilibrium Modeling of Carrier Dynamics in IIINitride Optoelectronic Devices
Project P9: Prof. Dr. Ferdinand Scholz (Speaker) and Prof. Dr. Klaus Thonke
Institut für Optoelektronik (FS), Institut für Quantenmaterie (KT), Universität Ulm
3D GaN based GaInN/GaN structures with reduced piezoelectric polarization
Project P10: : Prof. Dr. Ulrich Schwarz (Deputy Speaker)
Fakultät für Physik, Universität Freiburg
Microscopic analysis of semi- and non-polar nitrides

 


Goals

The group aims to control polarization effects in group III nitride-based heterostructures and investigate various approaches towards application in optoelectronic devices. The challenge is to close the so-called “green gap” describing lower efficiency in GaN based green light emitters as opposed to their blue and ultraviolet counterparts and, ultimately, to develop green nitride-based laser diodes. One of the obstacles is thought to be the polar character of GaN and related compounds, in particular for devices grown along the crystalline c-axis. The PolarCoN team will investigate possibilities to close the “green gap” by studying non-polar nitride-based heterostructures and devices. The main approach will be the epitaxial growth of such structures in non- or semipolar directions, which requires new strategies to overcome a number of material and structural problems. Another approach is the minimization of any polarisation induced fields on c-plane surfaces by polarisation matching material combinations like AlInN-GaInN. The group will work on epitaxial growth of defect-free non-polar materials including the development of free-standing non- and semipolar GaN substrates. On such templates, optoelectronic device structures will be grown with a major focus on longer wavelength, non-polar laser diodes. The respective building blocks – active quantum wells, n- and p-type doping, device processing, mirror fabrication etc. – will be developed by the different groups of the consortium and strongly supported by theoretical modelling efforts. This Transregional Research Unit is funded by the German Research Foundation (Deutsche Forschungsgemeinschaft, DFG).


 More information available on the PolarCoN website: http://www.gan-polarcon.de/