n this Letter, we present narrow line width (7 μeV), nearly background-free single-photon emission (g (2)(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for largescale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.
Publication: Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots
K. D. Jöns, P. Atkinson, M. Müller, M. Heldmaier, S. M. Ulrich, O. G. Schmidt, and P. Michler 
Nano Lett., 2013, 13 (1), pp 126–130
Contact person: Prof. Peter Michler